Scalable triode pecvd source and system

Abstract

Plasma deposition systems and techniques are provided that use plasma generating units having one horizontal dimension at least three times as long as the other horizontal dimension. Plasma sources as disclosed herein thus have non-uniformly scaled dimensions in the x and y directions, to facilitate uniform deposition. Sources as disclosed herein may reduce heating of the substrate due to substrate cooling between plasma sources. They also may provide improved particle coverage when the film deposited is a barrier film due to plasma and gas flow divergence at the edges of the plasma source.

1 . A plasma deposition system comprising:
 a first plasma generating unit comprising:
 a first upper electrode; 
 a first lower electrode; and 
 a first gas inlet; 
   wherein the first plasma generating unit has a first horizontal dimension W and a second horizontal dimension L, and L is at least 3W.   
     
     
         2 . The system of  claim 1 , wherein the first plasma generating unit further comprises a first central electrode disposed between the first upper electrode and the first lower electrode. 
     
     
         3 . The system of  claim 2 , wherein the first central electrode is perforated. 
     
     
         4 . The system of  claim 2 , further comprising:
 a first electrical power supply electrically connected to the first upper electrode; and   a second electrical power supply, electrically separate from the first electrical power supply and electrically connected to the first lower electrode.   
     
     
         5 . The system of  claim 2 , further comprising a first electrical power supply electrically connected to the first upper electrode and the first lower electrode. 
     
     
         6 . The system of  claim 1 , wherein L is at least 10W. 
     
     
         7 . The system of  claim 1 , wherein L is at least 20W. 
     
     
         8 . The system of  claim 1 , further comprising a first gas distributor having a first horizontal dimension X and a second horizontal dimension M>X, the first gas distributor disposed adjacent to the first plasma generating unit with an edge having length M about parallel to an edge of the plasma generating unit having length L. 
     
     
         9 . The system of  claim 1 , wherein the first gas inlet is disposed closer to an outer edge of the first plasma generating unit than to the center of the first plasma generating unit. 
     
     
         10 . The system of  claim 1 , further comprising a second plasma generating unit comprising:
 a second upper electrode;   a second lower electrode; and   a second gas inlet.   
     
     
         11 . The system of  claim 10 , further comprising an insulator disposed adjacent to the second plasma generating unit and configured to prevent movement of a plasma beyond a region defined by the second upper electrode and the second lower electrode. 
     
     
         12 . The system of  claim 10 , further comprising:
 a first electrical power supply electrically connected to the first plasma generating unit; and   a second electrical power supply, electrically separate from the first electrical power supply, electrically connected to the second plasma generating unit.   
     
     
         13 . The system of  claim 10 , wherein the second upper electrode is not parallel to the first upper electrode. 
     
     
         14 . The system of  claim 10 , wherein the second lower electrode is not parallel to the first lower electrode. 
     
     
         15 . The system of  claim 1 , further comprising a plurality N of plasma generating units, each of the plurality of plasma generating units comprising:
 an upper electrode; and   a lower electrode.   
     
     
         16 . The system of  claim 15 , wherein the total length of the plurality of plasma generating units in the W dimension is at least Z, and the total length of the plurality of plasma generating units in the L dimension is at least NW. 
     
     
         17 . The system of  claim 15 , further comprising a cooling region disposed between the first plasma generating unit and the second plasma generating unit. 
     
     
         18 . The system of  claim 17 , further comprising an active cooling system disposed in the cooling region. 
     
     
         19 . The system of  claim 17 , further comprising a gas outlet disposed in the cooling region. 
     
     
         20 . The system of  claim 15 , wherein at least a first of the N plasma generating units is disposed such that the upper electrode of the at least a first of the N plasma generating units is not parallel to an upper electrode of at least a second of the N plasma generating units. 
     
     
         21 . A deposition system comprising:
 a plasma deposition system as recited in  claim 1 ; and   a moveable substrate holder configured to translate a substrate between the first upper electrode and the first lower electrode.   
     
     
         22 . The system of  claim 21 , wherein the moveable substrate holder comprises a roll-to-roll substrate mechanism. 
     
     
         23 . A method of depositing a layer on a substrate, comprising:
 obtaining a substrate;   placing the substrate between a first upper electrode and a first lower electrode of a first plasma generating unit having a horizontal dimension W and a horizontal dimension L, wherein L is at least 3W;   introducing a first gas into the region between the first upper electrode and the first lower electrode; and   activating the first plasma generating unit to generate a first plasma adjacent to the substrate.   
     
     
         24 . The method of  claim 23 , wherein the substrate is placed between the first upper electrode and the first lower electrode at an angle greater than 0 degrees. 
     
     
         25 . The method of  claim 23 , wherein placing the substrate between the first upper electrode and the first lower electrode comprises translating the substrate between the first upper electrode and the first lower electrode. 
     
     
         26 . The method of  claim 23 , further comprising:
 placing the substrate between a second upper electrode and a second lower electrode of a second plasma generating unit having a horizontal dimension X and a horizontal dimension M, wherein M is at least 3X;   introducing a second gas into the region between the second upper electrode and the second lower electrode; and   activating the second plasma generating unit to generate a second plasma adjacent to the substrate.   
     
     
         27 . The method of  claim 26 , wherein the substrate is placed between the first upper electrode and the first lower electrode at a first angle relative to the first upper electrode, and the substrate is placed between the second upper electrode and the second lower electrode at a second angle, different than the first angle, relative to the second upper electrode.