Light emitting diode having electrode pads

Abstract

A light-emitting diode includes a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad electrically connected to the second conductive type semiconductor layer, and an insulation layer disposed under the second electrode pad. The insulation layer overlaps the first conductive type semiconductor layer and the second conductive type semiconductor layer. The insulation layer is flush with an edge of the first conductive type semiconductor layer and the second electrode pad is spaced apart from the edge of the first conductive type semiconductor layer.

What is claimed is: 
     
         1 . A light emitting diode, comprising:
 a substrate;   a first conductive type semiconductor layer arranged on the substrate;   a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer;   active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer;   a first electrode pad electrically connected to the first conductive type semiconductor layer;   a second electrode pad electrically connected to the second conductive type semiconductor layer; and   an insulation layer disposed under the second electrode pad;   wherein:   the insulation layer overlaps the first conductive type semiconductor layer and the second conductive type semiconductor layer; and   the insulation layer is flush with an edge of the first conductive type semiconductor layer and the second electrode pad is spaced apart from the edge of the first conductive type semiconductor layer.   
     
     
         2 . The light emitting diode of  claim 1 , wherein the first conductive type semiconductor layer is an n-type layer. 
     
     
         3 . The light emitting diode of  claim 1 , further comprising an electrode layer arranged on the second conductive type semiconductor layer. 
     
     
         4 . The light emitting diode of  claim 3 , further comprising a connecting portion connected to the second electrode pad and arranged on the electrode layer. 
     
     
         5 . The light emitting diode of  claim 3 , wherein side surfaces of the second conductive type semiconductor layer and the active layer are insulated from the second electrode pad by the insulation layer. 
     
     
         6 . The light emitting diode of  claim 5 , wherein the insulation layer extends to and is disposed on an upper surface of the electrode layer. 
     
     
         7 . The light emitting diode of  claim 5 , wherein the side surfaces of the second conductive type semiconductor layer have a degree of inclination in a range of 30 to 70 degrees. 
     
     
         8 . The light emitting diode of  claim 3 , wherein:
 the second electrode pad comprises a first region arranged on the first conductive type semiconductor layer, a second region arranged on the electrode layer, and a third region arranged between the first and second regions; and   the third region is disposed on a portion of side surfaces.   
     
     
         9 . The light emitting diode of  claim 1 , wherein the second electrode pad and the second conductive type semiconductor layer are separated from each other by at least the insulation layer. 
     
     
         10 . The light emitting diode of  claim 1 , wherein the second conductive type semiconductor layer and the active layer are divided to define at least two light emitting regions. 
     
     
         11 . The light emitting diode of  claim 10 , wherein the at least two light emitting regions are arranged symmetrically with respect to an imaginary line through the first electrode pad and the second electrode pad. 
     
     
         12 . The light emitting diode of  claim 10 , further comprising at least one first extension connected to the first electrode pad,
 wherein a first lower extension of the at least one first extension is arranged between a first light emitting region and a second light emitting region of the at least two light emitting regions.   
     
     
         13 . A light-emitting diode, comprising:
 a first group of first light emitting cells comprising a plurality of pairs of first light emitting cells, the light emitting cells in each pair facing each other;   a first common cathode line connected to each pair of first light emitting cells; and   first anode lines respectively connected to the first light emitting cells at a first side and a second side in each pair of first light emitting cells,   wherein each first light emitting cell comprises a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and   
       wherein each pair of first light emitting cells shares the first conductivity-type semiconductor layer. 
     
     
         14 . The light-emitting diode of  claim 13 , wherein the plurality of pairs of first light emitting cells share the first conductivity-type semiconductor layer. 
     
     
         15 . The light-emitting diode of  claim 13 , wherein the plurality of pairs of first light emitting cells are arranged in a substantially straight line, and the first light emitting cells in each pair are arranged to face each other with respect to the first common cathode line. 
     
     
         16 . The light-emitting diode of  claim 13 , further comprising:
 a second group of second light emitting cells comprising a plurality of pairs of second light emitting cells, the light emitting cells in each pair facing each other;   a second common cathode line connected to each pair of second light emitting cells; and   second anode lines respectively connected to the second light emitting cells at a first side and a second side in each pair of second light emitting cells,   wherein each second light emitting cell comprises a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and   wherein each pair of second light emitting cells shares the first conductivity-type semiconductor layer.   
     
     
         17 . The light-emitting diode of  claim 16 , wherein the first common cathode line is electrically connected to the second anode lines. 
     
     
         18 . The light-emitting diode of  claim 17 , wherein the plurality of pairs of second light emitting cells in the second group are arranged in a substantially straight line, and the second light emitting cells are arranged to face each other with respect to the second common cathode in each pair.