US2017012099A1PendingUtilityA1

Methods and apparatus related to termination regions of a semiconductor device

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Assignee: FAIRCHILD SEMICONDUCTORPriority: Mar 15, 2013Filed: Sep 23, 2016Published: Jan 12, 2017
Est. expiryMar 15, 2033(~6.6 yrs left)· nominal 20-yr term from priority
Inventors:Joseph A. YedinakRichard Stokes
H10P 14/00H10D 62/10H10D 30/66H10D 64/514H10D 62/112H10D 64/519H10D 64/117H10D 64/112H10D 62/115H10D 62/104H10D 30/665H10D 30/63H10D 12/441H10D 64/20H10D 30/668H01L 29/7395H01L 29/0661H01L 29/7811H01L 29/7827H01L 29/404H01L 29/407
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Claims

Abstract

In one general aspect, an apparatus can include a semiconductor region having an active region, and an end trench defined within a termination region of the semiconductor region where the end trench has a curved shape.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An apparatus, comprising:
 a semiconductor region having an active region; and   an end trench defined within a termination region of the semiconductor region, the end trench having a curved shape.

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