Film forming apparatus having an injector

Abstract

A thin film forming apparatus includes: an injector, the injector including: a distributor including a first distribution portion connected to a first gas inlet, and a second distribution portion connected to a second gas inlet; and a guide connected to the distributor, the guide including a first outlet connected to the first distribution portion, and a second outlet connected to the second distribution portion, wherein the second outlet is disposed above the first outlet.

What is claimed is: 
     
         1 . A thin film forming apparatus, comprising:
 an injector, the injector including:   a distributor including a first distribution portion connected to a first gas inlet, and a second distribution portion connected to a second gas inlet; and   a guide connected to the distributor, the guide including a first outlet connected to the first distribution portion, and a second outlet connected to the second distribution portion,   wherein the second outlet is disposed above the first outlet.   
     
     
         2 . The apparatus of  claim 1 , wherein each of the first distribution portion, and the second distribution portion include a plurality of holes. 
     
     
         3 . The apparatus of  claim 1 , wherein the distributor includes a third distribution portion connected to a third gas inlet, and the guide includes a third outlet connected to the third distribution portion, wherein the third outlet is disposed above the second outlet. 
     
     
         4 . The apparatus of  claim 1 , further comprising:
 a reactive gas source;   a reactive gas controller connected to the reactive gas source;   a reactive gas valve connected to the reactive gas controller; and   an inlet valve connected between the reactive gas valve and the second gas inlet.   
     
     
         5 . The apparatus of  claim 4 , further comprising:
 a carrier gas source;   a carrier gas controller connected to the carrier gas source; and   a carrier gas valve connected between the carrier gas controller and the first gas inlet.   
     
     
         6 . A thin film forming apparatus, comprising:
 a chamber, the chamber including:   an entrance;   a susceptor configured to receive a substrate provided via the entrance;   an exit through which a byproduct resulting from a process leaves the chamber; and   a first injector disposed in the chamber, the first injector including:   a first outlet configured to provide a carrier gas to the substrate; and   a second outlet configured to provide a reactive gas to the substrate,   wherein the first outlet and the second outlet are alternately arranged in a direction that is perpendicular to the substrate.   
     
     
         7 . The apparatus of  claim 6 , wherein the first outlet is closer to the substrate than the second outlet. 
     
     
         8 . The apparatus of  claim 6 , wherein the first chamber is disposed opposite the exit. 
     
     
         9 . The apparatus of  claim 6 , further comprising:
 a carrier gas source connected to the first outlet; and   a reactive gas source connected to the second outlet.   
     
     
         10 . The apparatus of  claim 6 , wherein the chamber includes:
 a second injector including:   a first outlet configured to provide the carrier gas to the substrate; and   a second outlet configured to provide the reactive gas to the substrate,   wherein the first outlet and the second outlet are alternately arranged in the direction that is perpendicular to the substrate.   
     
     
         11 . The apparatus of  claim 10 , wherein the second injector is disposed at a corner where two sidewalls of the chamber meet. 
     
     
         12 . The apparatus of  claim 10 , wherein the chamber includes:
 a third injector including:   a first outlet configured to provide the carrier gas to the substrate; and   a second outlet configured to provide the reactive gas to the substrate,   wherein the first outlet and the second outlet are alternately arranged in the direction that is perpendicular to the substrate.   
     
     
         13 . The apparatus of  claim 12 , wherein the third injector is disposed at a sidewall of the chamber. 
     
     
         14 . A method of forming a semiconductor device, comprising:
 loading a wafer onto a susceptor, wherein the susceptor is disposed inside a chamber;   heating the inside of the chamber; and   rotating the susceptor, and first forming a film on the wafer by outputting a reactive gas and a carrier gas from an injector disposed at a sidewall of the chamber to form a semiconductor device having a first layer, wherein the first layer is manufactured under a first condition,   wherein the injector includes a first outlet to output the carrier gas and a second outlet to output the reactive gas, wherein the first outlet is disposed below the second outlet.   
     
     
         15 . The method of  claim 14 , wherein the first layer of the semiconductor device forms a source or a drain. 
     
     
         16 . The method of  claim 14 , wherein the carrier gas includes H2 and the reactive gas includes at least one of DCS, HCI, GeH4 and B2H6. 
     
     
         17 . The method of  claim 14 , further comprising:
 changing the first condition to a second condition, rotating the susceptor, and second forming the film by outputting the reactive gas and the carrier gas using the injector to form a second layer of the semiconductor device.   
     
     
         18 . The method of  claim 17 , wherein a flow rate of the reactive gas in the first forming is different from a flow rate of the reactive gas in the second forming. 
     
     
         19 . The method of  claim 17 , further comprising:
 changing the second condition to a third condition, rotating the susceptor, and third forming the film using the reactive gas and the carrier gas using the injector to form a third layer of the semiconductor device;   removing the wafer from the chamber; and   cleaning the chamber.   
     
     
         20 . The method of  claim 19 , wherein the first to third conditions include pressure and temperature.