Composite structure based on ce: yag wafer, and manufacturing method thereof

Abstract

The invention discloses a composite structure based on a Ce:YAG wafer, comprising the Ce:YAG wafer and a red light emitting layer fixed on the Ce:YAG wafer. The invention further discloses a manufacturing method of the composite structure based on a Ce:YAG wafer, through which a composite optical structure capable of emitting light ranging from green light to red light is formed. The composite optical structure can be widely applied in the fields of detection equipment and illumination devices.

1 . A composite structure based on a Ce:YAG wafer, comprising a Ce:YAG wafer and a red light emitting layer fixed on the Ce:YAG wafer. 
     
     
         2 . The composite structure based on a Ce:YAG wafer according to  claim 1 , wherein the main light emitting peak of the red light emitting layer is within a range of 580 nm-660 nm. 
     
     
         3 . The composite structure based on a Ce:YAG wafer according to  claim 2 , wherein the red light emitting layer is a coated film layer emitting red light. 
     
     
         4 . The composite structure based on a Ce:YAG wafer according to  claim 2 , wherein the red light emitting layer is a transparent colloid layer doped with fluorescent powder emitting red light. 
     
     
         5 . The composite structure based on a Ce:YAG wafer according to  claim 2 , wherein the red light emitting layer is a crystal, ceramic or glass doped with a red light emitting center. 
     
     
         6 . A manufacturing method of the composite structure based on a Ce:YAG wafer, comprising the following steps:
 (1) producing a Ce:YAG wafer by a pulling method, temperature gradient method or kyropoulos method;   (2) cutting and polishing the Ce:YAG wafer produced in step (1) to obtain a fluorescent wafer with required size; and   (3) adding a red light emitting layer to the fluorescent wafer produced in step (2).   
     
     
         7 . The manufacturing method of the composite structure based on a Ce:YAG wafer according to  claim 6 , wherein the red light emitting layer in step (3) is a red light emitting film coated by physical or chemical vapor deposition method. 
     
     
         8 . The manufacturing method of the composite structure based on a Ce:YAG wafer according to  claim 6 , wherein the red light emitting layer in step (3) is a transparent colloid layer doped with fluorescent powder emitting red light. 
     
     
         9 . The manufacturing method of the composite structure based on a Ce:YAG wafer according to  claim 6 , wherein the red light emitting layer in step (3) is fixed on the fluorescent wafer, and is one of a crystal, ceramic and glass doped with a red light emitting center of rare earth or transitional metal.