Semiconductor device and method of manufacturing the same

Abstract

A method of manufacturing a semiconductor device, includes forming a trench in a semiconductor substrate having a first face and a second face by processing the first face of the semiconductor substrate, the trench including a first portion and a second portion located between the first portion and a plane including a first face, filling an insulator in the second portion such that a space remains in the first portion and the trench is closed, and forming a plurality of elements between the first face and the second face, wherein the space and the insulator form element isolation.

1 . (canceled) 
     
     
         2 . A semiconductor device comprising:
 a semiconductor substrate having a first face and a second face opposite to the first face, and having a trench extending in a first direction from the second face to the first face; and   a wiring structure provided on a side of the first face with respect to the semiconductor substrate,   wherein the semiconductor substrate further comprises:   an element comprising a first semiconductor region of a first conductive type;   a second semiconductor region of a second conductive type, arranged between the first semiconductor region and the trench in a second direction perpendicular to the first direction; and   a third semiconductor region of the second conductive type, arranged between the second face and the first semiconductor region in the first direction.   
     
     
         3 . The semiconductor device according to  claim 2 , further comprising a gate electrode of a transistor formed on the side of the first face with respect to the semiconductor substrate,
 wherein the gate electrode is arranged between the first face and the wiring structure.   
     
     
         4 . The semiconductor device according to  claim 2 , wherein the element is a photoelectric converter. 
     
     
         5 . The semiconductor device according to  claim 2 , wherein a width of the trench in the second direction at a first depth from the second face of the second substrate is greater than a width of the trench in the second direction at a second depth from the second face, and
 wherein the second depth is deeper than the first depth from the second face of the semiconductor substrate.   
     
     
         6 . The semiconductor device according to  claim 2 , wherein a color filter layer and a microlens layer are arranged on a side of the second face with respect to the semiconductor substrate. 
     
     
         7 . The semiconductor device according to  claim 2 , further comprising a fourth semiconductor region of the first conductivity type having a boundary that contacts the trench, the first semiconductor region, the second semiconductor region, and the third semiconductor region. 
     
     
         8 . The semiconductor device according to  claim 7 , wherein the fourth semiconductor region includes a portion arranged between the first semiconductor region and the second semiconductor region. 
     
     
         9 . A camera comprising:
 the semiconductor device according to  claim 2 ; and   a processing unit configured to process an output signal from the semiconductor device.