US2017005020A1PendingUtilityA1

Method for manufacturing semiconductor device

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Assignee: PS5 LUXCO S A R LPriority: Jan 22, 2013Filed: Jul 11, 2016Published: Jan 5, 2017
Est. expiryJan 22, 2033(~6.5 yrs left)· nominal 20-yr term from priority
Inventors:Sensho Usami
H10W 74/00H10W 74/10H10W 90/722H10W 70/60H10W 90/28H10W 72/0198H10W 72/884H10W 74/15H10W 72/5449H10W 90/754H10W 72/29H10W 72/59H10W 46/607H10W 90/00H10W 90/724H10W 90/732H10W 90/734H10P 74/203H10P 74/23H10P 54/00H10P 50/28H10W 42/121H10W 99/00H10W 74/117H10W 74/014H10W 74/01H10P 74/238H01L 22/12H01L 23/3128H01L 24/49H01L 22/26H01L 25/50H01L 25/0657H01L 21/561H01L 2224/48091
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Claims

Abstract

A sample semiconductor device is manufactured and the curvature of the sample is measured. An area is set to be removed from an encapsulation resin layer on the basis of the measurement value. After forming the encapsulation resin layer during the process of manufacturing the semiconductor device, the removal area is removed.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method for manufacturing a semiconductor device, comprising:
 manufacturing a sample semiconductor device;   taking a measurement value relating to curvature of the sample;   determining a removal region having a region for removal from a sealing resin layer covering one surface of the semiconductor device positioned on the opposite side of a substrate when the semiconductor device is mounted on said substrate in accordance with the measurement value;   forming the sealing resin layer; and   removing the removal region.

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