US2016380149A1PendingUtilityA1
Light emitting diode having well and/or barrier layers with superlattice structure
Est. expiryMar 29, 2027(~0.7 yrs left)· nominal 20-yr term from priority
H01L 33/06H01L 33/32H10H 20/815H10H 20/825H01S 5/34333B82Y 20/00H10H 20/812
47
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Claims
Abstract
A light emitting diode includes an N-type GaN-based semiconductor compound layer, a P-type GaN-based semiconductor compound layer, and an active region disposed between the P-type and N-type layers, the active region comprising alternately laminated well layers and barrier layers. The well layers comprise Al x In y Ga 1−(x+y) N, where 0≦x, y≦1, the barrier layers comprise Al x In y Ga 1−(x+y) N, where 0≦x, y≦1, and at least one of the barrier layers comprises first and second layers having different compositions.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A light emitting diode (LED) comprising:
an N-type GaN-based semiconductor compound layer; a P-type GaN-based semiconductor compound layer; and an active region disposed between the P-type and N-type layers, the active region comprising alternately laminated well layers and barrier layers, wherein: the well layers comprise Al x In y Ga 1−(x+y) N, where 0≦x, y≦1; the barrier layers comprise Al x In y Ga 1−(x+y) N, where 0≦x, y≦1; and at least one of the barrier layers comprises first and second layers having different compositions.Join the waitlist — get patent alerts
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