US2016379959A1PendingUtilityA1

Cavity bridge connection for die split architecture

Assignee: QUALCOMM INCPriority: Mar 30, 2015Filed: Sep 9, 2016Published: Dec 29, 2016
Est. expiryMar 30, 2035(~8.7 yrs left)· nominal 20-yr term from priority
H10W 90/733H10W 90/724H10W 90/722H10W 72/252H10W 72/242H10W 72/241H10W 72/072H10W 70/63H10W 70/60H10W 90/701H10W 74/129H10W 74/014H10W 70/685H10W 70/635H10W 70/611H10W 70/65H10W 70/618H10W 90/00H01L 25/0655H01L 23/49822H01L 24/32H01L 23/3114H01L 2224/32137
48
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Claims

Abstract

An integrated circuit (IC) package structure may include a substrate. The substrate may include a semiconductor bridge having a first surface directly on a surface of the substrate that faces a first semiconductor die and a second semiconductor die. The semiconductor bridge may be disposed within a cavity extending through a photo-sensitive layer on the surface of the substrate. The semiconductor bridge may have an exposed, second surface substantially flush with the photo-sensitive layer. The first semiconductor die and the second semiconductor die are supported by the substrate and coupled together through the semiconductor bridge.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An integrated circuit (IC) package structure, comprising:
 a substrate;   a semiconductor bridge having a first bridge surface directly on a substrate surface, the first bridge surface facing away from a first semiconductor die and a second semiconductor die, the semiconductor bridge disposed within a cavity extending through a photo-dielectric layer on the substrate surface, wherein the semiconductor bridge has a second bridge surface opposite the first bridge surface and facing the first semiconductor die and the second semiconductor die, the second bridge surface is substantially flush with the photo-dielectric layer, and is free of contact with the photo-dielectric layer; and   the first semiconductor die and the second semiconductor die supported by the substrate and coupled together through the semiconductor bridge.   
     
     
         2 . The integrated circuit package structure of  claim 1 , in which the substrate further comprises a contact layer including a dielectric layer on a core substrate and at least one conductive contact surrounded by the dielectric layer. 
     
     
         3 . The integrated circuit package structure of  claim 1 , in which the photo-dielectric layer comprises a multilayer photo-dielectric region including layers of a photo-imageable dielectric (PID) material. 
     
     
         4 . The integrated circuit package structure of  claim 3 , in which the PID material comprises polybenzoxazole (PBO). 
     
     
         5 . The integrated circuit package structure of  claim 1  in which the substrate is a non-symmetric structure including a solder resist build-up layer opposite the surface of the substrate facing the first semiconductor die and the second semiconductor die. 
     
     
         6 . The integrated circuit package structure of  claim 1 , in which the photo-dielectric layer directly contacts sidewalls of the semiconductor bridge. 
     
     
         7 . The integrated circuit package structure of  claim 1 , in which the substrate comprises an Ajinomoto Build-up Film (ABF) substrate. 
     
     
         8 . The integrated circuit package structure of  claim 1 , in which a package is coupled to a molding compound surrounding the first semiconductor die and the second semiconductor die. 
     
     
         9 . The integrated circuit package structure of  claim 1 , in which a package is directly stacked on a molding compound surrounding the first semiconductor die and the second semiconductor die. 
     
     
         10 . The integrated circuit package structure of  claim 1 , incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, and a computer. 
     
     
         11 . An integrated circuit (IC) package structure, comprising:
 a substrate;   a semiconductor bridge having a first bridge surface directly on a substrate surface, the first bridge surface facing away from a first semiconductor die and a second semiconductor die that are supported by the substrate, the semiconductor bridge disposed within a cavity extending through a photo-dielectric layer on the substrate surface, wherein the semiconductor bridge has a second bridge surface opposite the first bridge surface and facing the first semiconductor die and the second semiconductor die, the second bridge surface is substantially flush with the photo-dielectric layer, and is free of contact with the photo-dielectric layer; and   means for coupling the first semiconductor die and the second semiconductor die through the semiconductor bridge.   
     
     
         12 . The integrated circuit package structure of  claim 11 , in which the substrate farther comprises a contact layer including a dielectric layer on a core substrate and at least one conductive contact surrounded by the dielectric layer. 
     
     
         13 . The integrated circuit package structure of  claim 11 , in which the photo-dielectric layer comprises a multilayer photo-dielectric region including layers of a photo-imageable dielectric (PID) material. 
     
     
         14 . The integrated circuit package structure of  claim 18 , in which the PID material comprises polybenzoxazole (PBO). 
     
     
         15 . The integrated circuit package structure of  claim 11  in which the substrate is a non-symmetric structure including a solder resist build-up layer opposite the surface of the substrate facing the first semiconductor die and the second semiconductor die. 
     
     
         16 . The integrated circuit package structure of  claim 11 , in which the photo-dielectric layer directly contacts sidewalls of the semiconductor bridge. 
     
     
         17 . The integrated circuit package structure of  claim 11 , in which the substrate comprises an Ajinomoto Build-up Film (ABF) substrate. 
     
     
         18 . The integrated circuit package structure of  claim 11 , in which a package is coupled to a molding compound surrounding the first semiconductor die and the second semiconductor die. 
     
     
         19 . The integrated circuit package structure of  claim 11 , in which a package is directly stacked on a molding compound surrounding the first semiconductor die and the second semiconductor die. 
     
     
         20 . The integrated circuit package structure of  claim 11 , incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, and a computer.

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