Cavity bridge connection for die split architecture
Abstract
An integrated circuit (IC) package structure may include a substrate. The substrate may include a semiconductor bridge having a first surface directly on a surface of the substrate that faces a first semiconductor die and a second semiconductor die. The semiconductor bridge may be disposed within a cavity extending through a photo-sensitive layer on the surface of the substrate. The semiconductor bridge may have an exposed, second surface substantially flush with the photo-sensitive layer. The first semiconductor die and the second semiconductor die are supported by the substrate and coupled together through the semiconductor bridge.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . An integrated circuit (IC) package structure, comprising:
a substrate; a semiconductor bridge having a first bridge surface directly on a substrate surface, the first bridge surface facing away from a first semiconductor die and a second semiconductor die, the semiconductor bridge disposed within a cavity extending through a photo-dielectric layer on the substrate surface, wherein the semiconductor bridge has a second bridge surface opposite the first bridge surface and facing the first semiconductor die and the second semiconductor die, the second bridge surface is substantially flush with the photo-dielectric layer, and is free of contact with the photo-dielectric layer; and the first semiconductor die and the second semiconductor die supported by the substrate and coupled together through the semiconductor bridge.
2 . The integrated circuit package structure of claim 1 , in which the substrate further comprises a contact layer including a dielectric layer on a core substrate and at least one conductive contact surrounded by the dielectric layer.
3 . The integrated circuit package structure of claim 1 , in which the photo-dielectric layer comprises a multilayer photo-dielectric region including layers of a photo-imageable dielectric (PID) material.
4 . The integrated circuit package structure of claim 3 , in which the PID material comprises polybenzoxazole (PBO).
5 . The integrated circuit package structure of claim 1 in which the substrate is a non-symmetric structure including a solder resist build-up layer opposite the surface of the substrate facing the first semiconductor die and the second semiconductor die.
6 . The integrated circuit package structure of claim 1 , in which the photo-dielectric layer directly contacts sidewalls of the semiconductor bridge.
7 . The integrated circuit package structure of claim 1 , in which the substrate comprises an Ajinomoto Build-up Film (ABF) substrate.
8 . The integrated circuit package structure of claim 1 , in which a package is coupled to a molding compound surrounding the first semiconductor die and the second semiconductor die.
9 . The integrated circuit package structure of claim 1 , in which a package is directly stacked on a molding compound surrounding the first semiconductor die and the second semiconductor die.
10 . The integrated circuit package structure of claim 1 , incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, and a computer.
11 . An integrated circuit (IC) package structure, comprising:
a substrate; a semiconductor bridge having a first bridge surface directly on a substrate surface, the first bridge surface facing away from a first semiconductor die and a second semiconductor die that are supported by the substrate, the semiconductor bridge disposed within a cavity extending through a photo-dielectric layer on the substrate surface, wherein the semiconductor bridge has a second bridge surface opposite the first bridge surface and facing the first semiconductor die and the second semiconductor die, the second bridge surface is substantially flush with the photo-dielectric layer, and is free of contact with the photo-dielectric layer; and means for coupling the first semiconductor die and the second semiconductor die through the semiconductor bridge.
12 . The integrated circuit package structure of claim 11 , in which the substrate farther comprises a contact layer including a dielectric layer on a core substrate and at least one conductive contact surrounded by the dielectric layer.
13 . The integrated circuit package structure of claim 11 , in which the photo-dielectric layer comprises a multilayer photo-dielectric region including layers of a photo-imageable dielectric (PID) material.
14 . The integrated circuit package structure of claim 18 , in which the PID material comprises polybenzoxazole (PBO).
15 . The integrated circuit package structure of claim 11 in which the substrate is a non-symmetric structure including a solder resist build-up layer opposite the surface of the substrate facing the first semiconductor die and the second semiconductor die.
16 . The integrated circuit package structure of claim 11 , in which the photo-dielectric layer directly contacts sidewalls of the semiconductor bridge.
17 . The integrated circuit package structure of claim 11 , in which the substrate comprises an Ajinomoto Build-up Film (ABF) substrate.
18 . The integrated circuit package structure of claim 11 , in which a package is coupled to a molding compound surrounding the first semiconductor die and the second semiconductor die.
19 . The integrated circuit package structure of claim 11 , in which a package is directly stacked on a molding compound surrounding the first semiconductor die and the second semiconductor die.
20 . The integrated circuit package structure of claim 11 , incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, and a computer.Join the waitlist — get patent alerts
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