Suspended type nanowire array and manufacturing method thereof

Abstract

A suspended type nanowire array and a manufacturing method thereof may be provided. More particularly, an array including a suspended type nanowire having two kinds of nanowires stacked thereon and a manufacturing method thereof may be provided. The suspended type nanowire array includes: a substrate; a suspended type nanowire which is suspended above the substrate and comprises a first nanowire, an insulating member, and a second nanowire which are sequentially stacked; a first electrode portion which is electrically connected to the first nanowire; and a second electrode portion which is electrically connected to the second nanowire.

1 . A suspended type nanowire array comprising:
 a substrate;   a suspended type nanowire which is suspended above the substrate and comprises a first nanowire, an insulating member, and a second nanowire which are sequentially stacked;   a first electrode portion which is electrically connected to the first nanowire; and   a second electrode portion which is electrically connected to the second nanowire.   
     
     
         2 . The suspended type nanowire array of  claim 1 , wherein a length of the insulating member is less than a length of the first nanowire, and wherein a length of the second nanowire is the same as or is less than the length of the insulating member. 
     
     
         3 . The suspended type nanowire array of  claim 1 , wherein the first nanowire is a heat radiator. 
     
     
         4 . The suspended type nanowire array of  claim 1 , wherein a plurality of the suspended type nanowires are provided, wherein two adjacent suspended type nanowires among the plurality of suspended type nanowires are disposed apart from each other at a predetermined distance, and wherein a duty ratio between the two first nanowires of the two suspended type nanowires is greater than 2.5%. 
     
     
         5 . The suspended type nanowire array of  claim 1 , wherein materials of the first nanowire and the second nanowire are a metal or a metal oxide, and wherein the material of the first nanowire is different from the material of the second nanowire. 
     
     
         6 . The suspended type nanowire array of  claim 1 , wherein the insulating member is an insulating wire, wherein the insulating wire covers an entire top surface and a portion of a side of the first nanowire, and wherein the second nanowire is disposed on a top surface of the insulating wire. 
     
     
         7 . The suspended type nanowire array of  claim 1 , wherein the insulating member is an insulating thin film. 
     
     
         8 . The suspended type nanowire array of  claim 1 , wherein a plurality of the suspended type nanowires are provided, and further comprising:
 a first suspended type electrode which is disposed on the first nanowires of the plurality of suspended type nanowires; and   a second suspended type electrode which is disposed on the second nanowires of the plurality of suspended type nanowires.   
     
     
         9 . The suspended type nanowire array of  claim 8 , wherein one end of each of the first nanowires is connected to the first electrode portion, and wherein the second electrode portion comprises a first electrode and a second electrode which are electrically connected through the second nanowires and the second suspended type electrode. 
     
     
         10 . The suspended type nanowire array of  claim 1 , wherein the first electrode portion comprises a first electrode connected to one end of the first nanowire and a second electrode connected to the other end of the first nanowire, and wherein the second electrode portion comprises a first electrode and a second electrode which are electrically connected through the second nanowire. 
     
     
         11 . The suspended type nanowire array of  claim 9 , wherein each of the first electrode of the second electrode portion and the second electrode of the second electrode portion comprises an extension electrode which is disposed on the second nanowire and is suspended above the substrate. 
     
     
         12 . The suspended type nanowire array of  claim 9 , wherein the substrate comprises protrusions on which the first electrode of the first electrode portion, the second electrode of the first electrode portion, the first electrode of the second electrode portion, and the second electrode of the second electrode portion are disposed respectively. 
     
     
         13 . A method for manufacturing a suspended type nanowire array, the method comprising:
 forming a nanowire such that a first nanowire is formed on a predetermined number of protrusions of a nanograting substrate by using a photolithographic technique or a shadow mask technique, and an insulating member and a second nanowire are sequentially deposited on the first nanowire by using the photolithographic technique or the shadow mask technique;   forming an electrode such that a first electrode portion which is electrically connected to the first nanowires and a second electrode portion which is electrically connected to the second nanowires are formed by using a patterning technique or the shadow mask technique; and   etching the nanograting substrate by a predetermined thickness from a top surface to a bottom surface thereof.   
     
     
         14 . The method of  claim 13 , wherein, in the forming an electrode, a first docking electrode is formed on the first nanowires, a second docking electrode is formed on the second nanowires, one end of each of the first nanowires is connected to the first electrode portion, and an extension electrode extending from the second electrode portion is formed on the second nanowires. 
     
     
         15 . The method of  claim 13 , wherein, in the forming an electrode, one end of each of the first nanowires is connected to a first electrode of the first electrode portion, and the other end of each of the first nanowires is connected to a second electrode of the first electrode portion, and an extension electrode extending from the second electrode portion is formed on the second nanowires.