Laser Diode Chip Having Coated Laser Facet

Abstract

A laser diode chip has a laser facet, which includes a coating. The coating includes an inorganic layer and an organic layer. In one example, the coating has a number of inorganic layers, including a heat-conductive layer. For example, the inorganic layers may form a reflection-increasing or reflection-decreasing layer sequence.

1 - 17 . (canceled) 
     
     
         18 . A laser diode chip having a laser facet, which comprises a coating, wherein the coating comprises an inorganic layer and an organic layer. 
     
     
         19 . The laser diode chip according to  claim 18 , wherein the organic layer comprises a diffusion barrier layer. 
     
     
         20 . The laser diode chip according to  claim 19 , wherein the inorganic layer comprises a heat-conductive layer, wherein the coating comprises a plurality of inorganic layers, which are at least partially arranged in a reflection-increasing or reflection-decreasing layer sequence, and wherein the heat-conductive layer is arranged between the reflection-increasing or reflection-decreasing layer sequence and the diffusion barrier layer. 
     
     
         21 . The laser diode chip according to  claim 18 , wherein the organic layer comprises an alkane, alkene, alkyne, a cycloalkane, cycloalkene, a polyamide or an aluminum alkoxide. 
     
     
         22 . The laser diode chip according to  claim 18 , wherein the organic layer comprises an organic cover layer. 
     
     
         23 . The laser diode chip according to  claim 22 , wherein the organic cover layer is a hydrophobic layer or a non-stick layer. 
     
     
         24 . The laser diode chip according to  claim 23 , wherein the organic cover layer has a contact angle for water greater than 90°. 
     
     
         25 . The laser diode chip according to  claim 22 , wherein the organic cover layer contains carbon nanotubes, an organic fluorine or sulfur compound, a thiol, a silane, a chlorosilane, an amine, an alcohol, a carbon acid, a siloxane or a dimethylamino silane. 
     
     
         26 . The laser diode chip according to  claim 18 , wherein the inorganic layer comprises a heat-conductive layer. 
     
     
         27 . The laser diode chip according to  claim 26 , wherein the heat-conductive layer is arranged between a first organic diffusion barrier layer and a second organic diffusion barrier layer. 
     
     
         28 . The laser diode chip according to  claim 26 , wherein the heat-conductive layer comprises a transparent conductive oxide, ITO, ZnO, GaN, AlN, diamond-like carbon (DLC), SiC or graphene. 
     
     
         29 . The laser diode chip according to  claim 18 , wherein the inorganic layer comprises a dielectric protective layer that is in direct contact with the laser facet. 
     
     
         30 . The laser diode chip according to  claim 29 , wherein the dielectric protective layer is an ALD-layer. 
     
     
         31 . The laser diode chip according to  claim 18 , wherein the inorganic layer comprises a reflection-increasing or a reflection-decreasing layer. 
     
     
         32 . The laser diode chip according to  claim 18 , wherein the coating comprises a plurality of inorganic layers, which are at least partially arranged in a reflection-increasing or reflection-decreasing layer sequence. 
     
     
         33 . The laser diode chip according to  claim 32 , wherein the reflection-increasing or reflection-decreasing layer sequence contains both inorganic layers and organic layers. 
     
     
         34 . The laser diode chip according to  claim 18 , wherein the inorganic layer comprises at least one material selected from the group consisting of SiO 2 , Al 2 O 3 , TiO 2 , Ta 2 O 5 , Si 3 N 4 , ZrO 2 , HfO 2 , Nb 2 O 5 , Y 2 O 3 , Ho 2 O 3 , CeO 3 , Lu 2 O 3 , V 2 O 5 , HfZrO, MgO, TaC, ZnO, CuO, In 2 O 3 , Yb 2 O 3 , Sm 2 O 3 , Nd 2 O 3 , Sc 2 O 3 ; B 2 O 3 , Er 2 O 3 , Dy 2 O 3 , Tm 2 O 3 , SrTiO 3 , BaTiO 3 , PbTiO 3 , PbZrO 3 , Ga 2 O 3 , HfAlO, and HfTaO. 
     
     
         35 . A laser diode chip having a laser facet, which comprises a coating, wherein the coating comprises a plurality of inorganic layers and an organic layer;
 wherein the inorganic layers comprise a heat-conductive layer;   wherein the heat-conductive layer comprises a transparent conductive oxide, ITO, ZnO, GaN, AlN, diamond-like carbon (DLC), SiC or graphene;   wherein the inorganic layers comprise a reflection-increasing or reflection-decreasing layer sequence;   wherein the number of layers in the reflection-increasing or reflection-decreasing layer sequence ranges between 2 and 50; and   wherein the heat-conductive layer is arranged between the reflection-increasing or reflection-decreasing layer sequence and the organic layer.   
     
     
         36 . The laser diode chip according to  claim 35 , wherein the organic layer comprises an organic cover layer. 
     
     
         37 . The laser diode chip according to  claim 35 , wherein the organic layer comprises a diffusion barrier layer. 
     
     
         38 . The laser diode chip according to  claim 35 , wherein the number of layers in the reflection-increasing or reflection-decreasing layer sequence ranges between 4 and 20.