Semiconductor manufacturing apparatus

Abstract

A semiconductor manufacturing apparatus according to an embodiment comprises a chamber capable of containing a substrate therein. A mount part can have the substrate mounted thereon. A first member is provided between an inner wall of the chamber and a plasma generation region above the mount part. An optical transmitter is provided in an opening that is provided in the first member to extend from a side of the inner wall of the chamber to the plasma generation region or provided in gaps between a plurality of the first members.

1 . A semiconductor manufacturing apparatus comprising:
 a chamber capable of containing a substrate therein;   a mount part capable of having the substrate mounted thereon;   a first member provided between an inner wall of the chamber and a plasma generation region above the mount part; and   an optical transmitter provided in an opening that is provided in the first member to extend from a side of the inner wall of the chamber to the plasma generation region or provided in gaps between a plurality of the first members.   
     
     
         2 . The apparatus of  claim 1 , further comprising an optical analyzer connected to the optical transmitter and analyzing plasma emission in the plasma generation region. 
     
     
         3 . The apparatus of  claim 1 , wherein an end of the optical transmitter is located to be substantially flush with an end of the first member on a side of the plasma generation region. 
     
     
         4 . The apparatus of  claim 1 , wherein an end of the optical transmitter is located nearer the chamber than an end of the first member on a side of the plasma generation region. 
     
     
         5 . The apparatus of  claim 1 , further comprising a dielectric film provided on a surface of an end of the optical transmitter. 
     
     
         6 . The apparatus of  claim 3 , further comprising a dielectric film provided on a surface of an end of the optical transmitter. 
     
     
         7 . The apparatus of  claim 4 , further comprising a dielectric film provided on a surface of an end of the optical transmitter. 
     
     
         8 . The apparatus of  claim 1 , wherein a plurality of the optical transmitters are arranged at different positions in a direction substantially perpendicular to a surface of the mount part, respectively. 
     
     
         9 . The apparatus of  claim 8 , further comprising an optical analyzer connected to the optical transmitters and detecting an end of processing of the substrate based on a difference between an intensity of light obtained from a first optical transmitter that is closest to the mount part among the optical transmitters and an intensity of light obtained from a second optical transmitter that is farther from the mount part than the first optical transmitter. 
     
     
         10 . The apparatus of  claim 1 , wherein a plurality of the optical transmitters are arranged at different positions in directions substantially horizontal to a surface of the mount part, respectively. 
     
     
         11 . The apparatus of  claim 8 , wherein a plurality of the optical transmitters are arranged at different positions in directions substantially horizontal to a surface of the mount part, respectively. 
     
     
         12 . The apparatus of  claim 9 , wherein a plurality of the optical transmitters are arranged at different positions in directions substantially horizontal to a surface of the mount part, respectively. 
     
     
         13 . A semiconductor manufacturing apparatus comprising:
 a chamber capable of containing a substrate therein;   a mount part capable of having the substrate mounted thereon;   a first member provided between an inner wall of the chamber and a plasma generation region above the mount part, the first member transmitting plasma emission from the plasma generation region; and   an optical transmitter provided outside the chamber and transmitting the plasma emission.   
     
     
         14 . The apparatus of  claim 13 , wherein the first member transmits light larger than 0 nanometer and equal to or smaller than 1000 nanometers. 
     
     
         15 . The apparatus of  claim 13 , wherein borosilicate glass or sapphire is used for the first member. 
     
     
         16 . A semiconductor manufacturing apparatus comprising:
 a chamber capable of containing a substrate therein;   a mount part capable of having the substrate mounted thereon;   a first member provided between an inner wall of the chamber and a plasma generation region above the mount part;   a dielectric film provided on a side surface of the first member on a side of the mount part; and   an optical transmitter provided outside the chamber and transmitting plasma emission.   
     
     
         17 . The apparatus of  claim 16 , wherein the dielectric film has a lower reflectance of the plasma emission than the first member. 
     
     
         18 . The apparatus of  claim 16 , wherein Al 2 O 3 , sapphire, or a silicon nitride film is used for the dielectric film. 
     
     
         19 . The apparatus of  claim 17 , wherein Al 2 O 3 , sapphire, or a silicon nitride film is used for the dielectric film.