Driver circuit and semiconductor device

Abstract

The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH 4 ) and ammonia (NH 3 ) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354 , and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906 . As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

1 . (canceled) 
     
     
         2 . An oxide semiconductor layer comprising indium and zinc, wherein the oxide semiconductor layer includes a meander portion. 
     
     
         3 . The oxide semiconductor layer according to  claim 2 , wherein the meander portion comprises a plurality of bending portions. 
     
     
         4 . The oxide semiconductor layer according to  claim 2 , wherein the oxide semiconductor layer further comprises a metal element selected from gallium, iron, nickel, manganese, and cobalt. 
     
     
         5 . The oxide semiconductor layer according to  claim 2 , wherein the oxide semiconductor layer further comprises nitrogen. 
     
     
         6 . A passive element comprising:
 an oxide semiconductor layer comprising indium and zinc; and   an insulating layer over and in contact with the oxide semiconductor layer,   wherein the oxide semiconductor layer includes a meander portion.   
     
     
         7 . The passive element according to  claim 6 , wherein the meander portion comprises a plurality of bending portions. 
     
     
         8 . The passive element according to  claim 6 , wherein the oxide semiconductor layer further comprises a metal element selected from gallium, iron, nickel, manganese, and cobalt. 
     
     
         9 . The passive element according to  claim 6 , wherein the oxide semiconductor layer further comprises nitrogen. 
     
     
         10 . The passive element according to  claim 6 , wherein the passive element is a resistor element. 
     
     
         11 . The passive element according to  claim 6 , wherein the insulating layer is a silicon nitride layer comprising hydrogen. 
     
     
         12 . A semiconductor device comprising:
 a transistor comprising a first oxide semiconductor layer comprising indium and zinc; and   a passive element electrically connected to the transistor, the passive element comprising a second oxide semiconductor layer comprising indium and zinc,   wherein a hydrogen concentration of the second oxide semiconductor layer is higher than a hydrogen concentration of the first oxide semiconductor layer, and   wherein the second oxide semiconductor layer includes a meander portion.   
     
     
         13 . The semiconductor device according to  claim 12 , wherein the meander portion comprises a plurality of bending portions. 
     
     
         14 . The semiconductor device according to  claim 12 , wherein the second oxide semiconductor layer further comprises a metal element selected from gallium, iron, nickel, manganese, and cobalt. 
     
     
         15 . The semiconductor device according to  claim 12 , wherein the second oxide semiconductor layer further comprises nitrogen. 
     
     
         16 . The semiconductor device according to  claim 12 , wherein the passive element is a resistor element. 
     
     
         17 . The semiconductor device according to  claim 12 ,
 wherein the passive element further comprises an insulating layer over and in contact with the second oxide semiconductor layer, and   wherein the insulating layer is a silicon nitride layer comprising hydrogen.