Wireless Processor, Wireless Memory, Information System, And Semiconductor Device

Abstract

The invention provides a processor obtained by forming a high functional integrated circuit using a polycrystalline semiconductor over a substrate which is sensitive to heat, such as a plastic substrate or a plastic film substrate. Moreover, the invention provides a wireless processor, a wireless memory, and an information processing system thereof which transmit and receive power or signals wirelessly. According to the invention, an information processing system includes an element forming region including a transistor which has at least a channel forming region formed of a semiconductor film separated into islands with a thickness of 10 to 200 nm, and an antenna. The transistor is fixed on a flexible substrate. The wireless processor in which a high functional integrated circuit including the element forming region is formed and the semiconductor device transmit and receive data through the antenna.

1 . (canceled) 
     
     
         2 . A semiconductor device comprising:
 an element forming region comprising a transistor, the transistor comprising a semiconductor film with a thickness of 10 to 200 nm; and   wherein the transistor is fixed on a substrate,   wherein the transistor comprises:
 a bottom electrode and a gate electrode; and 
 the semiconductor film between the bottom electrode and the gate electrode, the semiconductor film comprising a channel forming region, and 
   wherein part of the bottom electrode does not overlap with the gate electrode in a channel width direction when seen from above.   
     
     
         3 . The semiconductor device according to  claim 2 , wherein the semiconductor film comprises an amorphous semiconductor or a crystalline semiconductor. 
     
     
         4 . The semiconductor device according to  claim 2 ,
 wherein the semiconductor film comprises an impurity region, and   wherein the impurity region and the gate electrode do not overlap each other.   
     
     
         5 . The semiconductor device according to  claim 2 , further comprising:
 a first insulating film between the bottom electrode and the semiconductor film; and   a second insulating film between the semiconductor film and the gate electrode.   
     
     
         6 . The semiconductor device according to  claim 2 , further comprising a third insulating film being in contact with the gate electrode. 
     
     
         7 . The semiconductor device according to  claim 2 , further comprising:
 a first wiring being in contact with the part of the bottom electrode; and   a second wiring being electrically connected to the gate electrode.   
     
     
         8 . The semiconductor device according to  claim 2 , wherein the bottom electrode and the gate electrode are separately controlled. 
     
     
         9 . The semiconductor device according to  claim 2 , wherein the bottom electrode is electrically connected to the gate electrode. 
     
     
         10 . The semiconductor device according to  claim 2 , wherein a threshold voltage of the transistor is controlled by the bottom electrode. 
     
     
         11 . The semiconductor device according to  claim 2 , further comprising an antenna. 
     
     
         12 . A wireless processor comprising the semiconductor device according to  claim 2 . 
     
     
         13 . A wireless memory comprising the semiconductor device according to  claim 2 .