US2016358853A1PendingUtilityA1
Method of manufacturing semiconductor device and semiconductor device
Est. expiryJan 15, 2034(~7.5 yrs left)· nominal 20-yr term from priority
H10W 72/5522H10W 72/953H10W 72/9415H10W 72/29H10W 72/922H10W 72/59H10W 72/952H10W 72/9223H10W 72/90H10W 72/019H10W 72/01938H10W 72/983H10W 72/50H10W 72/923H10W 72/075H10W 72/01551H10W 72/07511H10W 72/072H10W 72/252H10W 72/242H10W 72/01225H10W 72/01208H10W 20/425H10W 20/031H10W 20/077H10W 20/071H10W 20/42H10P 95/00H10P 14/69391H10P 14/6319H10P 14/6314H10P 74/207H10P 14/69433H10P 14/6334H10W 72/541H10W 72/244H10W 72/015H10W 72/012H10W 20/4405H10W 20/43H10D 84/85H10D 84/83H01L 23/53214H01L 23/528H01L 21/0217H01L 24/13H01L 27/088H01L 23/5226H01L 24/45H01L 21/02271H10P 14/24
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Claims
Abstract
A semiconductor device includes a silicon nitride film formed above a front surface side of a semiconductor substrate, a first wiring formed above the silicon nitride film, a second wiring containing aluminum formed over the first wiring via a first insulating film, a second insulating film having an opening over the second wiring, and aluminum nitride formed over the second wiring at a bottom surface of the opening.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A semiconductor device comprising:
a silicon nitride film formed above a front surface side of a semiconductor substrate; a first wiring formed above the silicon nitride film; a second wiring containing aluminum formed over the first wiring via a first insulating film; a second insulating film having an opening over the second wiring; and aluminum nitride formed over the second wiring at a bottom surface of the opening.
2 . The semiconductor device according to claim 1 ,
wherein a bonding wire or a bump electrode is formed over the second wiring at the bottom surface of the opening.
3 . The semiconductor device according to claim 1 , further comprising:
a probe mark formed over the second wiring at the bottom surface of the opening.
4 . The semiconductor device according to claim 1 , further comprising:
aluminum oxide formed on side walls of the second wiring.
5 . The semiconductor device according to claim 4 , wherein the aluminum nitride and the aluminum oxide are formed over the second wiring at the bottom surface of the opening.
6 . The semiconductor device according to claim 1 , further comprising:
an MISFET formed over the semiconductor substrate, wherein the MISFET includes:
a gate electrode formed over the semiconductor substrate via a gate insulating film; and
a side wall insulating film formed on side walls of the gate electrode, and
wherein the silicon nitride film configures the side wall insulating film.
7 . The semiconductor device according to claim 1 , further comprising:
an MISFET formed over the semiconductor substrate; the silicon nitride film formed over source and drain regions of the MISFET; and a silicon oxide film formed over the silicon nitride film.
8 . The semiconductor device according to claim 1 ,
wherein the semiconductor substrate is in a wafer state, and wherein the silicon nitride film is formed also on a back surface of the semiconductor substrate.Join the waitlist — get patent alerts
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