US2016343922A1PendingUtilityA1

Light emitting device and method of fabricating the same

Assignee: SEOUL VIOSYS CO LTDPriority: Sep 30, 2008Filed: Aug 2, 2016Published: Nov 24, 2016
Est. expirySep 30, 2028(~2.2 yrs left)· nominal 20-yr term from priority
H10W 90/00H10H 20/841H10H 20/0364H10H 20/0363H10H 29/142H10H 20/01335H10H 20/857H10H 20/825H10H 20/812H10H 20/82H10H 20/018H10H 20/856H01L 33/60H01L 27/156H01L 2933/0066H01L 33/06H01L 33/32H01L 33/0079H01L 2933/0058H01L 33/007H01L 33/62H01L 33/22
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Claims

Abstract

Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A light emitting device, comprising:
 a substrate;   a first metal layer disposed on the substrate;   a second metal layer disposed on the first metal layer;   a third metal layer disposed on the second metal layer;   a first insulating layer comprising first openings;   a second insulating layer comprising second openings; and   light emitting cells disposed on the first insulating layer and the second insulating layer and electrically connected to the first, second, and third metal layers via the first openings and the second openings.   
     
     
         2 . The light emitting device of  claim 1 , wherein the first insulating layer and the second insulating layer contact each other. 
     
     
         3 . The light emitting device of  claim 2 , wherein the light emitting cells each comprise a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and
 the first insulating layer contacts each of the first semiconductor layer, the second semiconductor layer, and the active layer.   
     
     
         4 . The light emitting device of  claim 3 , further comprising a fourth metal layer electrically connected to the second and third metal layers. 
     
     
         5 . The light emitting device of  claim 4 , wherein the first insulating layer contacts the fourth metal layer. 
     
     
         6 . The light emitting device of  claim 5 , wherein the second metal layer is continuously disposed to extend along the substrate under at least two light emitting cells. 
     
     
         7 . The light emitting device of  claim 6 , further comprising a first electrode pad and a second electrode pad electrically connected to the light emitting cells. 
     
     
         8 . The light emitting device of  claim 7 , wherein the first electrode pad is electrically connected to a first light emitting cell of the light emitting cells via a first opening in the first insulating layer.

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