Method of forming a semiconductor die

Abstract

In one embodiment, semiconductor die having non-rectangular shapes and die having various different shapes are formed and singulated from a semiconductor wafer.

1 . (canceled) 
     
     
         2  . (canceled) 
     
     
         3  . (canceled) 
     
     
         4 . (canceled) 
     
     
         5  . (canceled) 
     
     
         6  . (canceled) 
     
     
         7  . (canceled) 
     
     
         8 . (canceled) 
     
     
         9 . (canceled) 
     
     
         10 . (canceled) 
     
     
         11 . (canceled) 
     
     
         12 . (canceled) 
     
     
         13 . (canceled) 
     
     
         14 . (canceled) 
     
     
         15 . (canceled) 
     
     
         16 . (canceled) 
     
     
         17 . (canceled) 
     
     
         18 . (canceled) 
     
     
         19 . (canceled) 
     
     
         20 . (canceled) 
     
     
         21 . (canceled) 
     
     
         22 . A semiconductor die comprising:
 a first surface having active areas of the semiconductor die;   a second surface that is opposite to the first surface; and   two substantially straight sides of the semiconductor die that intersect to form a first corner having a substantially curved shape, the semiconductor die having one or more other corners that have a different shape than the first corner.   
     
     
         23 . The semiconductor die of  claim 21  wherein a first side of the two substantially straight sides extends from the first surface to the second surface, a second side of the two substantially straight sides is adjacent to the first side and also extends from the first surface to the second surface, and the first corner extends between the first side and the second side and has a first end abutting the first side and a second end abutting the second side. 
     
     
         24 . The semiconductor die of  claim 22  wherein a first side of the two substantially straight sides intersects at a second corner with a third side of the semiconductor die and wherein the second corner has a first end that abuts the third side and a second end that abuts the first side wherein the second corner forms a substantially right angle between the first and third sides. 
     
     
         25 . The semiconductor die of  claim 24  wherein the third side extends from the first surface to the second surface and wherein the second corner also extends from the first surface to the second surface. 
     
     
         26 . The semiconductor die of  claim 22  wherein a second side of the two substantially straight sides intersects at a second corner with a third side of the semiconductor die and wherein the second corner extends substantially diagonally between the second side and the third side. 
     
     
         27 . The semiconductor die of  claim 26  wherein the third side extends from the first surface to the second surface and wherein the second corner also extends from the first surface to the second surface.