Semiconductor Device Having Gold Metallization Structures

Abstract

A semiconductor device includes a semiconductor substrate having first and second terminals of one or more semiconductor devices, first and second barrier metal regions electrically connected to the first and second terminals, respectively, and first and second gold metallization structures electrically connected to the first and second terminals via the first and second barrier metal regions, respectively. The first and second gold metallization structures contain diffused copper atoms. Interfaces between the first and second barrier metals and the first and second gold metallization structures, respectively, are substantially devoid of metallic copper.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a semiconductor substrate comprising first and second terminals of one or more semiconductor devices;   first and second barrier metal regions electrically connected to the first and second terminals, respectively; and   first and second gold metallization structures electrically connected to the first and second terminals via the first and second barrier metal regions, respectively;   wherein the first and second gold metallization structures comprise diffused copper atoms, and   wherein interfaces between the first and second barrier metals and the first and second gold metallization structures, respectively, are substantially devoid of metallic copper.   
     
     
         2 . The semiconductor device of  claim 1 , wherein a width of the first and second gold metallization structures is less than 10 μm, and wherein a separation distance between the first and second gold metallization lines is less than 10 μm. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the first terminal is a source terminal of a transistor, wherein the second terminal is a drain terminal of the transistor, and wherein the first and second gold metallization structures are electrically insulated from one another.