Method of reducing a sheet resistance in an electronic device, and an electronic device

Abstract

Various embodiments provide a method of reducing a sheet resistance in an electronic device encapsulated at least partially in an encapsulation material, wherein the method comprises: providing an electronic device comprising a multilayer structure and being at least partially encapsulated by an encapsulation material; and locally introducing energy into the multilayer structure for reducing a sheet resistance.

1 . A method of reducing a sheet resistance in an electronic device, the method comprising:
 providing an electronic device comprising a multilayer structure; and   locally introducing energy into the multilayer structure for reducing a sheet resistance.   
     
     
         2 . The method according to  claim 1 , wherein the locally energy introduction is performed from a backside of the electronic device. 
     
     
         3 . The method according to  claim 1 , wherein the multilayer structure is at least partially encapsulated by an encapsulation material. 
     
     
         4 . The method according to  claim 1 , wherein the multilayer structure comprising a metallization layer. 
     
     
         5 . The method according to  claim 3 , wherein the locally introducing of energy is performed in such a way that the encapsulation material remains at a temperature which is below a predetermined threshold. 
     
     
         6 . The method according to  claim 1 , wherein the multilayer structure comprises a semiconductor layer having a thickness of less than 200 micrometer. 
     
     
         7 . The method according to  claim 1 , wherein the energy is locally introduced by using a light source. 
     
     
         8 . The method according to  claim 7 , wherein the light source is one selected out of the group consisting of:
 laser;   focusable laser;   rapid thermal processing light source; and   lamps.   
     
     
         9 . The method according to  claim 1 , further comprising forming a mask before applying the energy. 
     
     
         10 . The method according to  claim 9 , wherein the forming of the mask includes a patterning of the mask. 
     
     
         11 . The method according to  claim 1 , further comprising forming an absorption layer before applying the energy. 
     
     
         12 . The method according to  claim 1 , wherein a layer of the multilayer structure is selected out of the group consisting of:
 a metallization layer;   a contact layer;   a layer of porous metal;   a doped layer;   a semiconductor layer.   
     
     
         13 . The method according to  claim 1 , wherein the locally introduced energy is used to densify a porous metal layer of the multilayer structure. 
     
     
         14 . The method according to  claim 1 , wherein the locally introduced energy is used to activate dopants doped into the multilayer structure. 
     
     
         15 . A method of manufacturing an electronic device, the method comprising:
 providing a raw electronic device comprising an electronic chip;   forming a contact layer onto the electronic chip; and   processing the contact layer by locally introducing energy into the contact layer.   
     
     
         16 . An electronic device comprising:
 a semiconductor chip comprising a multilayer structure comprising a semiconductor layer and a metallization layer   wherein the electronic device comprises a backside comprising at least one first portion and at least one second portion, wherein the at least one first portion and the at least one second portion were exposed to a different temperature during the manufacturing process of the electronic device.   
     
     
         17 . The electronic device according to  claim 16 , wherein the at least one first portion is formed by the metallization layer and the at least one second portion is formed by an encapsulation material. 
     
     
         18 . The electronic device according to  claim 16 , wherein the semiconductor layer has a thickness of less than 50 micrometer. 
     
     
         19 . The electronic device according to  claim 16 , wherein the metallization layer may comprising a material selected out of the group consisting of:
 copper;   aluminum; and   a mixture thereof.