Semiconductor device and electronic device

Abstract

A semiconductor device of one embodiment of the present invention includes a semiconductor, an insulator, a first conductor, and a second conductor. In the semiconductor device, a top surface of the semiconductor has a region in contact with the insulator; a side surface of the semiconductor has a region in contact with the insulator; the first conductor has a first region overlapping with the semiconductor with the insulator positioned therebetween; the first region has a region in contact with the top surface of the semiconductor and a region in contact with the side surface of the semiconductor; the second conductor has a second region in contact with the semiconductor; and the first region and the second region do not overlap with each other.

1 . (canceled) 
     
     
         2 . A semiconductor device comprising:
 a first semiconductor, the first semiconductor comprising;
 a first region; 
 a second region; and 
 a third region between the first region and the second region; 
   a first conductor over the first semiconductor;   a second conductor over the first semiconductor;   a second semiconductor over the first conductor, the second conductor and the first semiconductor, the second semiconductor being in contact with the first region of the first semiconductor, the second region of the first semiconductor and the third region of the first semiconductor;   a first insulator over the second semiconductor; and   a third conductor over the first insulator, the third conductor overlapping the third region of the first semiconductor,   wherein the third conductor does not overlap the first region of the first semiconductor and the second region of the first semiconductor.   
     
     
         3 . The semiconductor device according to  claim 2 , further comprising a second insulator over the first conductor, the second conductor and the third conductor. 
     
     
         4 . The semiconductor device according to  claim 3 ,
 wherein the second insulator has a higher relative permittivity than the first insulator.   
     
     
         5 . The semiconductor device according to  claim 2 ,
 wherein a length of the first region of the first semiconductor is less than or equal to 30 nm.   
     
     
         6 . The semiconductor device according to  claim 2 ,
 wherein the first semiconductor comprises a first layer and a second layer, and   wherein an electron affinity of the first layer is different from an electron affinity of the second layer.   
     
     
         7 . The semiconductor device according to  claim 2 ,
 wherein the first semiconductor comprises indium and oxygen.   
     
     
         8 . An electronic device comprising:
 a display device;   a battery; and   the semiconductor device according to  claim 2 .   
     
     
         9 . A semiconductor device comprising:
 a first semiconductor, the first semiconductor comprising:
 a first region; 
 a second region; 
 a third region between the first region and the second region; 
 a fourth region between the first region and the third region; and 
 a fifth region between the second region and the third region; 
   a first conductor over the first semiconductor, the first conductor being in contact with the first region of the first semiconductor;   a second conductor over the first semiconductor, the second conductor being in contact with the second region of the first semiconductor;   a second semiconductor over the first conductor, the second conductor and the first semiconductor, the second semiconductor comprising:
 a first region in contact with the third region of the first semiconductor; 
 a second region in contact with the fourth region of the first semiconductor; and 
 a third region in contact with the fifth region of the first semiconductor; 
   a first insulator over the second semiconductor; and   a third conductor over the first insulator, the third conductor overlapping the third region of the first semiconductor.   
     
     
         10 . The semiconductor device according to  claim 9 , further comprising a second insulator over the first conductor, the second conductor, the third conductor and the second semiconductor,
 wherein the first insulator is in contact with the first region of the second semiconductor, and   wherein the second insulator is in contact with the second region of the second semiconductor and the third region of the second semiconductor.   
     
     
         11 . The semiconductor device according to  claim 10 ,
 wherein the second insulator has a higher relative permittivity than the first insulator.   
     
     
         12 . The semiconductor device according to  claim 9 ,
 wherein the first insulator is in contact with the first region of the second semiconductor, the second region of the second semiconductor and the third region of the second semiconductor.   
     
     
         13 . The semiconductor device according to  claim 9 ,
 wherein a length of the fourth region of the first semiconductor is less than or equal to 30 nm.   
     
     
         14 . The semiconductor device according to  claim 9 ,
 wherein the first semiconductor comprises a first layer and a second layer, and   wherein an electron affinity of the first layer is different from an electron affinity of the second layer.   
     
     
         15 . The semiconductor device according to  claim 9 ,
 wherein the first semiconductor comprises indium and oxygen.   
     
     
         16 . An electronic device comprising:
 a display device;   a battery; and   the semiconductor device according to  claim 9 .   
     
     
         17 . A semiconductor device comprising:
 a first semiconductor;   a first conductor over the first semiconductor;   a second conductor over the first semiconductor;   a second semiconductor over the first conductor, the second conductor and the first semiconductor, the second semiconductor comprising a region in contact with the first semiconductor;   a first insulator over the second semiconductor;   a third conductor over the first insulator, the third conductor overlapping the region of the second semiconductor; and   a second insulator over the first conductor, the second conductor, the third conductor and the second semiconductor, the second insulator being in contact with the region of the second semiconductor.   
     
     
         18 . The semiconductor device according to  claim 17 ,
 wherein the second insulator has a higher relative permittivity than the first insulator.   
     
     
         19 . The semiconductor device according to  claim 17 ,
 wherein the first semiconductor comprises a first layer and a second layer, and   wherein an electron affinity of the first layer is different from an electron affinity of the second layer.   
     
     
         20 . The semiconductor device according to  claim 17 ,
 wherein the first semiconductor comprises indium and oxygen.   
     
     
         21 . An electronic device comprising:
 a display device;   a battery; and   the semiconductor device according to  claim 17 .