Solid state imaging element, production method thereof and electronic device

Abstract

There is provided a solid state imaging element including: an insulation film laminated on a semiconductor substrate; a lower transparent electrode film formed and separated by the insulation film per pixel; a hydrophobic treatment layer laminated on a flat surface of the insulation film and the lower transparent electrode film; an organic photoelectric conversion layer laminated on the hydrophobic treatment layer; and an upper transparent electrode film laminated on the organic photoelectric conversion layer. Also, there is provided a production method thereof and an electronic device.

What is claimed is: 
     
         1 . An imaging element, comprising:
 an insulation film laminated on a semiconductor substrate;   a lower transparent electrode film formed and separated by the insulation film per pixel;   a hydrophobic treatment layer disposed on an inorganic buffer layer;   an organic photoelectric conversion layer laminated on the hydrophobic treatment layer; and   an upper transparent electrode film laminated on the organic photoelectric conversion layer,   wherein the organic photoelectric conversion layer is formed to have an orientation status such that a C axis is almost in parallel with a surface of the lower transparent electrode film and a surface of the insulation film.   
     
     
         2 . The imaging element according to  claim 1 , wherein the hydrophobic treatment layer is formed by performing a surface treatment of surfaces of the inorganic buffer layer with a silylation agent. 
     
     
         3 . The imaging element according to  claim 2 , wherein hexamethyl silazane is used as the silylation agent used in the surface treatment for forming the hydrophobic treatment layer. 
     
     
         4 . The imaging element according to  claim 2 , wherein one of 1,1,3,3-tetramethyl disilazane [TMDS, [SiH(CH 3 ) 2 ] 2 NH], N-trimethylsilyldimethylamine (TMSDMA, (CH 3 ) 5 NSi), N-dimethylsilyldimethylamine (DMSDMA, (CH 3 ) 4 NHSi), 1-trimethylsilylpyrole (TMS pyrole), N,O-bis(trimethylsilyl)trifuluoroacetamide) (BSTFA) and bis(dimethylamino)dimethylsilane (BDMADMS) is used as the silylation agent used in the surface treatment for forming the hydrophobic treatment layer. 
     
     
         5 . The imaging element according to  claim 1 , wherein the inorganic buffer layer is disposed on the surface of the insulation film and the lower transparent electrode film. 
     
     
         6 . A method of producing an imaging element, comprising:
 laminating an insulation film on a semiconductor substrate;   forming a lower transparent electrode film separated by the insulation film per pixel;   forming an inorganic buffer layer on a surface of the insulation film and the lower transparent electrode film;   forming a hydrophobic treatment layer on the inorganic buffer layer;   laminating an organic photoelectric conversion layer on the hydrophobic treatment layer; and   laminating an upper transparent electrode film on the organic photoelectric conversion layer wherein the organic photoelectric conversion layer is formed to have an orientation status such that an C axis is almost in parallel with the lower transparent electrode film surface and the insulation film surface.   
     
     
         7 . The method of producing the imaging element according to  claim 6 , wherein the hydrophobic treatment layer is formed by performing a surface treatment of surfaces of the inorganic buffer layer with a silylation agent. 
     
     
         8 . The method of producing the imaging element according to  claim 7 , wherein hexamethyl silazane is used as the silylation agent used in the surface treatment for forming the hydrophobic treatment layer. 
     
     
         9 . The method of producing the imaging element according to  claim 7 , wherein one of 1,1,3,3-tetramethyl disilazane [TMDS, [SiH(CH 3 ) 2 ] 2 NH], N-trimethylsilyldimethylamine (TMSDMA, (CH 3 ) 5 NSi), N-dimethylsilyldimethylamine (DMSDMA, (CH 3 ) 4 NHSi), 1-trimethylsilylpyrole (TMS pyrole), N,O-bis(trimethylsilyl)trifuluoroacetamide) (BSTFA) and bis(dimethylamino)dimethylsilane (BDMADMS) is used as the silylation agent used in the surface treatment for forming the hydrophobic treatment layer. 
     
     
         10 . The method of producing the imaging element according to  claim 7 , wherein the inorganic buffer layer is disposed on the surface of the insulation film and the lower transparent electrode film. 
     
     
         11 . An electronic device having an imaging element, comprising:
 an insulation film laminated on a semiconductor substrate;   a lower transparent electrode film formed and separated by the insulation film per pixel;   an inorganic buffer layer disposed on a surface of the insulation film and the lower transparent electrode film;   a hydrophobic treatment layer disposed on the inorganic buffer layer;   an organic photoelectric conversion layer laminated on the hydrophobic treatment layer; and   an upper transparent electrode film laminated on the organic photoelectric conversion layer,   wherein the organic photoelectric conversion layer is formed to have an orientation status such that an C axis is almost in parallel with the lower transparent electrode film surface and the insulation film surface.   
     
     
         12 . The electronic device according to  claim 11 , wherein the hydrophobic treatment layer is formed by performing a surface treatment of surfaces of the inorganic buffer layer with a silylation agent. 
     
     
         13 . The electronic device according to  claim 12 , wherein hexamethyl silazane is used as the silylation agent used in the surface treatment for forming the hydrophobic treatment layer. 
     
     
         14 . The electronic device according to  claim 12 , wherein one of 1,1,3,3-tetramethyl disilazane [TMDS, [SiH(CH 3 ) 2 ] 2 NH], N-trimethylsilyldimethylamine (TMSDMA, (CH 3 ) 5 NSi), N-dimethylsilyldimethylamine (DMSDMA, (CH 3 ) 4 NHSi), 1-trimethylsilylpyrole (TMS pyrole), N,O-bis(trimethylsilyl)trifuluoroacetamide) (BSTFA) and bis(dimethylamino)dimethylsilane (BDMADMS) is used as the silylation agent used in the surface treatment for forming the hydrophobic treatment layer. 
     
     
         15 . The electronic device according to  claim 11 , wherein the inorganic buffer layer disposed on the surface of the insulation film and the lower transparent electrode film.