Composition for forming fine resist pattern and pattern forming method using same

Abstract

[Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition. [Means to solve the problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C): and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.

1 . A fine pattern-forming composition used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition, consisting of a polymer, an inorganic acid, a solvent and an optional surfactant, and further where the polymer is P1: 
       
         
           
           
               
               
           
         
       
     
     
         3 . The composition according to  claim 1 , where the acid is selected from the group consisting of hydrochloric acid, sulfuric acid, and nitric acid. 
     
     
         4 . The composition according to  claim 1 , wherein said solvent comprises water. 
     
     
         5 . The fine pattern-forming composition according to  claim 1  wherein the inorganic acid is present at 0.5 to 50 wt %, based on the total weight of the polymer. 
     
     
         6 . The fine pattern-forming composition according to  claim 1  wherein the inorganic acid is present at 2.5 to 30 wt %, based on the total weight of the polymer.