Method of forming fins from different materials on a substrate

Abstract

A method of forming fins of different materials includes providing a substrate with a layer of a first material having a top surface, masking a first portion of the substrate leaving a second portion of the substrate exposed, etching a first opening at the second portion, forming a body of a second material in the opening to a level of the top surface of the layer of the first material, removing the mask, and forming fins of the first material at the first portion and forming fins of the second material at the second portion. A finFET device having fins formed of at least two different materials is also disclosed.

What is claimed is: 
     
         1 . A finFEt device having fins formed of at least two different materials comprising:
 a substrate having a first layer having a top surface;   a first oxide layer on the first layer top surface, the first oxide layer having a top surface, the first oxide layer covering a first portion of the first layer and not covering a second portion of the first layer;   a first body of material at the second portion of the first layer, the first body of material having a top surface even with the top surface of the first oxide layer;   a first set of fins formed of a first material on the first oxide layer; and   a second set of fins formed of a second material on the first body of material.   
     
     
         2 . The FinFET device of  claim 1 , wherein the first layer comprises the second material. 
     
     
         3 . The finFET device of  claim 1 , wherein the substrate comprises a third material different than the first material and the second material. 
     
     
         4 . The finFEt device of  claim 3 , wherein the second material comprises germanium. 
     
     
         5 . The finFET device of  claim 3 , wherein the substrate comprises a second layer and a second oxide layer on the second layer, wherein the first layer is located on the second oxide layer, and including a second body of material extending from the second layer through the second oxide layer, the first layer and the first oxide layer, the second body of material having a top surface even with the top surface of the first oxide layer, the second body of material and the second layer being formed of a third material, and a third set of fins formed of the third material on the second body of material. 
     
     
         6 . The finFET device of  claim 5 , wherein the second material comprises germanium and the third material comprises silicon. 
     
     
         7 . The finFET device of  claim 6  integrated into at least one semiconductor die. 
     
     
         8 . The finFET device of  claim 7 , wherein the at least one semiconductor die is incorporated into a device selected from a group consisting of a set top box, music player, video player, entertainment unit, navigation device, communications device, personal digital assistant (PDA), fixed location data unit, and a computer. 
     
     
         9 . The finFET device of  claim 1  integrated into at least one semiconductor die. 
     
     
         10 . The finFET device of  claim 1 , wherein the finFET device is incorporate into a device selected from a group consisting of a set top box, music player, video player, entertainment unit, navigation device, communications device, personal digital assistant (PDA), fixed location data unit, and a computer. 
     
     
         11 . A finFEt device having fins formed of at least two different materials comprising:
 a substrate having a first layer having a top surface;   a first oxide layer on the first layer top surface, the first oxide layer having a top surface, the first oxide layer covering a first portion of the first layer and not covering a second portion of the first layer;   a first body of material at the second portion of the first layer, the first body of material having a top surface even with the top surface of the first oxide layer;   first means for forming a first portion of a semiconductor device; and   second means for forming a second portion of a semiconductor device.   
     
     
         12 . The FinFET device of  claim 11 , wherein the first layer comprises the second material. 
     
     
         13 . The finFET device of  claim 11 , wherein the substrate comprises a third material different than the first material and the second material. 
     
     
         14 . The finFEt device of  claim 13 , wherein the second material comprises germanium. 
     
     
         15 . The finFET device of  claim 13 , wherein the substrate comprises a second layer and a second oxide layer on the second layer, wherein the first layer is located on the second oxide layer, and including a second body of material extending from the second layer through the second oxide layer, the first layer and the first oxide layer, the second body of material having a top surface even with the top surface of the first oxide layer, the second body of material and the second layer being formed of a third material, and a third set of fins formed of the third material on the second body of material. 
     
     
         16 . The finFET device of  claim 15 , wherein the second material comprises germanium and the third material comprises silicon. 
     
     
         17 . The finFET device of  claim 16  integrated into at least one semiconductor die. 
     
     
         18 . The finFET device of  claim 17 , wherein the at least one semiconductor die is incorporated into a device selected from a group consisting of a set top box, music player, video player, entertainment unit, navigation device, communications device, personal digital assistant (PDA), fixed location data unit, and a computer. 
     
     
         17 . The finFET device of  claim 11  integrated into at least one semiconductor die. 
     
     
         18 . The finFET device of  claim 11 , wherein the finFET device is incorporated into a device selected from a group consisting of a set top box, music player, video player, entertainment unit, navigation device, communications device, personal digital assistant (PDA), fixed location data unit, and a computer.