Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Abstract

A film where a first layer and a second layer are laminated is formed on a substrate by performing: forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: supplying a source to the substrate, and supplying a reactant to the substrate, under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing: supplying the source to the substrate, and supplying the reactant to the substrate, under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device comprising:
 forming a film where a first layer and a second layer are laminated on a substrate by performing:   (a) forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing:
 (a-1) supplying a source to the substrate, and 
 (a-2) supplying a reactant to the substrate, 
   under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and   (b) forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing:
 (b-1) supplying the source to the substrate, and 
 (b-2) supplying the reactant to the substrate, 
   under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.   
     
     
         2 . The method according to  claim 1 , further comprising changing a temperature of the substrate from the first temperature to the second temperature. 
     
     
         3 . The method according to  claim 1 , wherein a thickness of the first layer is equal to or greater than a thickness of the second layer. 
     
     
         4 . The method according to  claim 1 , wherein the number of times of performing the first cycle is equal to or greater than the number of times of performing the second cycle. 
     
     
         5 . The method according to  claim 1 , wherein a body part of the film is formed in (a), and a thickness of the film is finely adjusted in (b). 
     
     
         6 . The method according to  claim 1 , wherein the first temperature is different from the second temperature, and a thickness of a layer formed by performing the first cycle once is different from a thickness of a layer formed by performing the second cycle once. 
     
     
         7 . The method according to  claim 1 , wherein a supply amount of the source to the substrate per the first cycle is equal to a supply amount of the source to the substrate per the second cycle, and
 a supply amount of the reactant to the substrate per the first cycle is equal to a supply amount of the reactant to the substrate per the second cycle.   
     
     
         8 . The method according to  claim 1 , wherein a difference between the first temperature and the second temperature is set to be 5° C. to 50° C. 
     
     
         9 . The method according to  claim 1 , wherein a thickness of the film to be formed on the substrate is different from an integer multiple of a thickness of a layer formed by performing the first cycle once, and further, a thickness of the film to be formed on the substrate is different from an integer multiple of a thickness of a layer formed by performing the second cycle once. 
     
     
         10 . The method according to  claim 1 , wherein a thickness of the film to be formed on the substrate is a thickness within a range of 1.5 Å to 10 Å. 
     
     
         11 . The method according to  claim 1 , wherein each of the first temperature and the second temperature is a temperature within a range of 0° C. to 150° C. 
     
     
         12 . The method according to  claim 1 , wherein a material of the first layer is the same as a material of the second layer. 
     
     
         13 . The method according to  claim 1 , wherein the reactant is an oxidizing agent, and the film formed on the substrate is an oxide film. 
     
     
         14 . The method according to  claim 13 , wherein each of (a) and (b) further comprises supplying a catalyst to the substrate. 
     
     
         15 . The method according to  claim 14 , wherein each of the first cycle and the second cycle comprises non-simultaneously performing:
 supplying the source and the catalyst to the substrate; and   supplying the reactant and the catalyst to the substrate.   
     
     
         16 . The method according to  claim 14 , wherein a gas containing silicon and a halogen group is used as the source, and a gas containing a hydroxy group is used as the oxidizing agent. 
     
     
         17 . The method according to  claim 13 , wherein a gas containing silicon and an amino group is used as the source, and a plasma-excited oxygen-containing gas is used as the oxidizing agent. 
     
     
         18 . The method according to  claim 1 , wherein a thickness of a layer formed by performing the first cycle once is made larger than a thickness of a layer formed by performing the second cycle once by setting the first temperature to be lower than the second temperature. 
     
     
         19 . A processing apparatus comprising:
 a process chamber in which a substrate is processed;   a first supply system configured to supply a source to the substrate in the process chamber;   a second supply system configured to supply a reactant to the substrate in the process chamber;   a heater configured to heat the substrate in the process chamber; and   a control unit configured to control the first supply system, the second supply system, and the heater so as to forma film where a first layer and a second layer are laminated on a substrate by performing, in the process chamber:   (a) forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing:
 (a-1) supplying a source to the substrate, and 
 (a-2) supplying a reactant to the substrate, 
   under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and   (b) forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing:
 (b-1) supplying the source to the substrate, and 
 (b-2) supplying the reactant to the substrate, 
   under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.   
     
     
         20 . A non-transitory computer-readable recording medium storing the program configured to cause a computer to perform:
 forming a film where a first layer and a second layer are laminated on a substrate by performing:   (a) forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing:
 (a-1) supplying a source to the substrate, and 
 (a-2) supplying a reactant to the substrate, 
   under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and   (b) forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing:
 (b-1) supplying the source to the substrate, and 
 (b-2) supplying the reactant to the substrate, 
   under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.