Apparatus and method of cleaving thin layer from bulk material
Abstract
Embodiments relate to use of a particle accelerator beam to form thin layers of material from a bulk substrate. In particular embodiments, a bulk substrate (e.g. donor substrate) having a top surface is exposed to a beam of accelerated particles. In certain embodiments, this bulk substrate may comprise a core of crystalline sapphire (Al 2 O 3 ) material. Then, a thin layer of the material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. Embodiments may find particular use as hard, scratch-resistant covers for personal electric device displays, or as optical surfaces for fingerprint, eye, or other biometric scanning.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . An apparatus comprising a cleaved single crystal sapphire layer having a thickness of between about 5 μm to about 100 μm.
2 . An apparatus as in claim 1 further comprising a laminated structure including an optical blank and an index matching material positioned between the cleaved single crystal sapphire layer and the optical blank.
3 . An apparatus as in claim 2 wherein the cleaved single crystal sapphire layer is free standing.
4 . An apparatus as in claim 3 wherein the optical blank and index matching material comprise a support.
5 . An apparatus as in claim 2 wherein:
the index matching material comprises an index-matching fluid; and
the optical blank comprises quartz.
6 . An apparatus as in claim 5 wherein an index of refraction of the index-matching fluid results in an internal reflection at the quartz/sapphire interface of less than 1%.
7 . An apparatus as in claim 5 wherein:
an index of refraction of the index-matching fluid results in an internal reflection at the quartz/sapphire interface of greater than 1%; and
the index matching material further comprises a dielectric stack matching material.
8 . An apparatus as in claim 2 wherein a surface of the cleaved single crystal sapphire layer is defined by a fracture plane resulting from hydrogen implantation.
9 . An apparatus as in claim 8 wherein a Total Thickness Variation (TTV) of the cleaved single crystal sapphire layer is +/−0.02 μm.
10 . An apparatus as in claim 9 wherein a roughness of the cleaved single crystal sapphire layer is about 6 nm Ra.
11 . An apparatus as in claim 9 wherein the fracture plane results from hydrogen implantation by a linear accelerator at an energy of 1.75 MeV or greater.
12 . An apparatus as in claim 9 wherein the laminated structure has a thickness of between 400-600 μm.
13 . An apparatus as in claim 2 wherein the cleaved single crystal sapphire layer reproduces a pseudo-square shape of a bulk core.
14 . An apparatus as in claim 2 further comprising:
a second cleaved single crystal sapphire layer positioned on an opposite side of the optical blank from the cleaved single crystal sapphire layer; and
a second index matching material positioned between the optical blank and the second cleaved single crystal sapphire layer.
15 . An apparatus as in claim 1 wherein the cleaved single crystal sapphire layer is characterized by a miscut angle from a major crystallographic axis.
16 . An apparatus as in claim 15 wherein the cleaved single crystal sapphire layer comprises c-cut oriented material.
17 . An apparatus as in claim 1 wherein the cleaved single crystal sapphire layer has other than a planar shape.
18 . An apparatus as in claim 17 wherein the cleaved single crystal sapphire layer is curved to match a lens profile.
19 . An apparatus as in claim 1 wherein the apparatus comprises a part of a cover for a display screen.
20 . An apparatus as in claim 1 wherein the apparatus comprises an optical surface of a biometric recognition device.Join the waitlist — get patent alerts
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