Semiconductor device

Abstract

A semiconductor device includes a first switching element; a second switching element; a first metal member; a second metal member; a first terminal that has a potential on a high potential side; a second terminal that has a potential on a low potential side; a third terminal that has a midpoint potential; and a resin part. A first potential part has potential equal to potential of the first terminal. A second potential part has potential equal to potential of the second terminal. A third potential part has potential equal to potential of the third terminal. A first creepage distance between the first potential part and the second potential part is longer than a minimum value of a second creepage distance between the first potential part and the third potential part and a third creepage distance between the second potential part and the third potential part.

1 - 7 . (canceled) 
     
     
         8 . A semiconductor device comprising:
 a first switching element that includes a first electrode and a second electrode and constitutes an upper arm of upper and lower arms, the first electrode and the second electrode of the first switching element respectively constituting both sides of the first switching element in a first direction;   a second switching element that is aligned with the first switching element in a second direction, includes a first electrode and a second electrode, and constitutes the lower arm of the upper and lower arms, the first electrode and the second electrode of the second switching element respectively constituting both sides of the second switching element in the first direction;   a first metal member that is electrically connected with the first electrode of the first switching element in the first direction;   a second metal member that is electrically connected with the first electrode of the second switching element in the first direction;   a first terminal that has a potential on a high potential side of the upper and lower arms;   a second terminal that has a potential on a low potential side of the upper and lower arms;   a third terminal that has a midpoint potential of the upper and lower arms; and   a resin part that integrally covers the first switching element, the second switching element, at least a part of the first metal member, at least a part of the second metal member, a part of the first terminal, a part of the second terminal, and a part of the third terminal,   wherein when a part that has potential equal to a potential of the first terminal is assumed as a first potential part, a part that has potential equal to a potential of the second terminal is assumed as a second potential part, and a part that has potential equal to a potential of the third terminal is assumed as a third potential part, a first creepage distance between the first potential part and the second potential part along a surface of the resin part is longer than a minimum value of a second creepage distance between the first potential part and the third potential part along the surface of the resin part and a third creepage distance between the second potential part and the third potential part along the surface of the resin part, and   the first direction is orthogonal with respect to the second direction.   
     
     
         9 . The semiconductor device according to  claim 8 , wherein the second terminal is located between the first terminal and the third terminal, and
 the first terminal, the second terminal and the third terminal extend on one side of the resin part.   
     
     
         10 . The semiconductor device according to  claim 9 , wherein
 the first terminal, the second terminal and the third terminal are aligned with each other in the second direction while extending in a third direction orthogonal to both the first direction and the second direction, and   the second terminal extends in the third direction from a position between the first metal member and the second metal member in the second direction.   
     
     
         11 . The semiconductor device according to  claim 8 , wherein
 the first metal member includes a first surface exposed from the resin part and a second surface that is an opposite surface of the first surface of the first metal member and faces the first electrode of the first switching element in the first direction,   the first surface of the first metal member forms the first potential part together with the first terminal,   the second metal member includes a first surface exposed from the resin part and a second surface that is an opposite surface of the first surface of the second metal member and faces the first electrode of the second switching element in the first direction, and   the first surface of the second metal member forms the third potential part together with the third terminal.   
     
     
         12 . The semiconductor device according to  claim 11  further comprising:
 a third metal member that is electrically connected with the second electrode of the first switching element, the second electrode of the first switching element being opposite to the first electrode of the first switching element in the first direction; and 
 a fourth metal member that is electrically connected with the second electrode of the second switching element, the second electrode of the second switching element being opposite to the first electrode of the second switching element in the first direction, wherein 
 the third metal member includes a first surface exposed from the resin part and a second surface that is an opposite surface of the first surface of the third metal member and faces the second electrode of the first switching element in the first direction, 
 the first surface of the third metal member forms the third potential part together with the third terminal and a surface of the second metal member, 
 the fourth metal member includes a first surface exposed from the resin part and a second surface that is an opposite surface of the first surface of the fourth metal member and faces the second electrode of the second switching element in the first direction, and 
 the first surface of the fourth metal member forms the second potential part together with the second terminal. 
 
     
     
         13 . A semiconductor device comprising:
 a first switching element that includes a first electrode and a second electrode and constitutes an upper arm of upper and lower arms, the first electrode and the second electrode of the first switching element respectively constituting both sides of the first switching element in a first direction;   a second switching element that is aligned with the first switching element in a second direction, includes a first electrode and a second electrode, and constitutes the lower arm of the upper and lower arms, the first electrode and the second electrode of the second switching element respectively constituting both sides of the second switching element in the first direction;   a first metal member that is electrically connected with the first electrode of the first switching element in the first direction;   a second metal member that is electrically connected with the first electrode of the second switching element in the first direction;   a first terminal that has a potential on a high potential side of the upper and lower arms;   a second terminal that has a potential on a low potential side of the upper and lower arms;   a third terminal that has a midpoint potential of the upper and lower arms; and   a resin part that integrally covers the first switching element, the second switching element, at least a part of the first metal member, at least a part of the second metal member, a part of the first terminal, a part of the second terminal, and a part of the third terminal,   wherein when a part that has potential equal to a potential of the first terminal is assumed as a first potential part, a part that has potential equal to a potential of the second terminal is assumed as a second potential part, and a part that has potential equal to a potential of the third terminal is assumed as a third potential part, a comparative tracking index of a first material that is provided between the first potential part and the second potential part in the resin part is higher than at least one of comparative tracking indexes of a second material and a third material, the second material being provided between the first potential part and the third potential part in the resin part, and the third material being provided between the second potential part and the third potential part in the resin part,   when a minimum value of creepage distances between the first potential part and the second potential part in the resin part is set to L 1 , a minimum creepage distance that is permitted to the first material between the first potential part and the second potential part is set to L 1 min, a minimum value of the creepage distances between the first potential part and the third potential part in the resin part is set to L 2 , the minimum creepage distance that is permitted to the second material between the first potential part and the third potential part is set to L 2 min, the minimum value of the creepage distance between the second potential part and the third potential part along the surface of the resin part is set to L 3 , and the minimum creepage distance that is permitted to the third material between the second potential part and the third potential part is set to L 3 min, at least any one of the following two formulas is satisfied,
   (L 2 −L 2 min)/L 2 min<(L 1 −L 1  min)/L 1 min
 
   (L 3 −L 3 min)/L 3 min<(L 1 −L 1  min)/L 1 min, and
 
   the first direction is orthogonal with respect to the second direction.   
     
     
         14 . The semiconductor device according to  claim 13 , wherein
 the second terminal is located between the first terminal and the third terminal, and   the first terminal, the second terminal and the third terminal extend on one side of the resin part.   
     
     
         15 . The semiconductor device according to  claim 14 , wherein
 the first terminal, the second terminal and the third terminal are aligned with each other in the second direction while extending in a third direction orthogonal to both the first direction and the second direction, and   the second terminal extends in the third direction from a position between the first metal member and the second metal member in the second direction.   
     
     
         16 . The semiconductor device according to  claim 13 , wherein
 the first metal member includes a first surface exposed from the resin part and a second surface that is an opposite surface of the first surface of the first metal member and faces the first electrode of the first switching element in the first direction,   the first surface of the first metal member forms the first potential part together with the first terminal,   the second metal member includes a first surface exposed from the resin part and a second surface that is an opposite surface of the first surface of the second metal member and faces the first electrode of the second switching element in the first direction, and   the first surface of the second metal member forms the third potential part together with the third terminal.   
     
     
         17 . The semiconductor device according to  claim 16  further comprising:
 a third metal member that is electrically connected with the second electrode of the first switching element, the second electrode of the first switching element being opposite to the first electrode of the first switching element in the first direction; and 
 a fourth metal member that is electrically connected with the second electrode of the second switching element, the second electrode of the second switching element being opposite to the first electrode of the second switching element in the first direction, wherein 
 the third metal member includes a first surface exposed from the resin part and a second surface that is an opposite surface of the first surface of the third metal member and faces the second electrode of the first switching element in the first direction, 
 the first surface of the third metal member forms the third potential part together with the third terminal and a surface of the second metal member, 
 the fourth metal member includes a first surface exposed from the resin part and a second surface that is an opposite surface of the first surface of the fourth metal member and faces the second electrode of the second switching element in the first direction, and 
 the first surface of the fourth metal member forms the second potential part together with the second terminal. 
 
     
     
         18 . A semiconductor device comprising:
 a first switching element that includes a first electrode and a second electrode and constitutes an upper arm of upper and lower arms, the first electrode and the second electrode of the first switching element respectively constituting both sides of the first switching element in a first direction;   a second switching element that is aligned with the first switching element in a second direction, includes a first electrode and a second electrode, and constitutes the lower arm of the upper and lower arms, the first electrode and the second electrode of the second switching element respectively constituting both sides of the second switching element in the first direction;   a first metal member that is electrically connected with the first electrode of the first switching element in the first direction;   a second metal member that is electrically connected with the first electrode of the second switching element in the first direction;   a first terminal that has a potential on a high potential side of the upper and lower arms;   a second terminal that has a potential on a low potential side of the upper and lower arms;   a third terminal that has a midpoint potential of the upper and lower arms; and   a resin part that integrally covers the first switching element, the second switching element, at least a part of the first metal member, at least a part of the second metal member, a part of the first terminal, a part of the second terminal, and a part of the third terminal,   wherein when a part that has potential equal to a potential of the first terminal is assumed as a first potential part, a part that has potential equal to a potential of the second terminal is assumed as a second potential part, and a part that has potential equal to a potential of the third terminal is assumed as a third potential part, a first spatial distance between the first potential part and the second potential part is longer than a minimum value of a second spatial distance between the first potential part and the third potential part and a third spatial distance between the second potential part and the third potential part, and   the first direction is orthogonal with respect to the second direction.   
     
     
         19 . The semiconductor device according to  claim 18 , wherein
 the second terminal is located between the first terminal and the third terminal, and   the first terminal, the second terminal and the third terminal extend on one side of the resin part.   
     
     
         20 . The semiconductor device according to  claim 19 , wherein
 the first terminal, the second terminal and the third terminal are aligned with each other in the second direction while extending in a third direction orthogonal to both the first direction and the second direction, and   the second terminal extends in the third direction from a position between the first metal member and the second metal member in the second direction.   
     
     
         21 . The semiconductor device according to  claim 18 , wherein
 the first metal member includes a first surface exposed from the resin part and a second surface that is an opposite surface of the first surface of the first metal member and faces the first electrode of the first switching element in the first direction,   the first surface of the first metal member forms the first potential part together with the first terminal,   the second metal member includes a first surface exposed from the resin part and a second surface that is an opposite surface of the first surface of the second metal member and faces the first electrode of the second switching element in the first direction, and   the first surface of the second metal member forms the third potential part together with the third terminal.   
     
     
         22 . The semiconductor device according to  claim 21  further comprising:
 a third metal member that is electrically connected with the second electrode of the first switching element, the second electrode of the first switching element being opposite to the first electrode of the first switching element in the first direction; and 
 a fourth metal member that is electrically connected with the second electrode of the second switching element, the second electrode of the second switching element being opposite to the first electrode of the second switching element in the first direction, wherein 
 the third metal member includes a first surface exposed from the resin part and a second surface that is an opposite surface of the first surface of the third metal member and faces the second electrode of the first switching element in the first direction, 
 the first surface of the third metal member forms the third potential part together with the third terminal and a surface of the second metal member, 
 the fourth metal member includes a first surface exposed from the resin part and a second surface that is an opposite surface of the first surface of the fourth metal member and faces the second electrode of the second switching element in the first direction, and 
 the first surface of the fourth metal member forms the second potential part together with the second terminal.