US2016308132A1PendingUtilityA1
Patterning of oled materials
Est. expiryAug 6, 2033(~7 yrs left)· nominal 20-yr term from priority
H10K 71/166C23C 14/042H01L 51/0011H01L 27/3211H01L 2251/308H01L 51/5056H01L 51/56H01L 51/5221H01L 2251/301H01L 51/0018H01L 51/5206H10K 2102/00H10K 2102/103H10K 85/633H10K 50/81H10K 50/15H10K 50/82H10K 59/35H10K 50/16H10K 71/00H10K 85/626H10K 85/324H10K 50/11H10K 71/233
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Claims
Abstract
A method of making a patterned OLED layer or layers. The method uses a shadow mask having, for example, a free-standing silicon nitride membrane to pattern color emitter material with a feature size of less than 10 microns. The methods can be used, for example, in the manufacture of OLED microdisplays.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method comprising:
providing a shadow mask having a free-standing silicon nitride membrane; and forming a pattern of a first color emitter material on a substrate using the shadow mask, wherein the pattern of a first color emitter material has one or more first color emitter material structures having at least one dimension of less than 10 microns.
2 . The method of claim 1 , further comprising forming a pattern of a second color emitter material on the substrate having the pattern of the first color emitter material using a second shadow mask having a free-standing silicon nitride membrane, wherein the pattern of the second color emitter material has one or more second color emitter material structures having at least one dimension of less than 10 microns.
3 . The method of claim 2 , wherein the first color emitter material structures and second color emitter material structures do not overlap.
4 . The method of claim 2 , further comprising forming a pattern of a third color emitter material on the substrate having the pattern of the first color emitter material and the pattern of the second color emitter material using a third shadow mask having a free-standing silicon nitride membrane, wherein the pattern of third color emitter material has one or more third color emitter material structures having at least one dimension of less than 10 microns.
5 . The method of claim 4 , wherein the first color emitter material structures and second color emitter material structures and third color emitter material structures do not overlap.
6 . The method of claim 1 , wherein the forming comprises deposition through the shadow mask using one of evaporation or sputtering.
7 . The method of claim 1 , wherein the substrate is part of an organic light-emitting diode.
8 . The method of claim 1 , wherein the shadow mask defines apertures having at least one dimension of 2.8 μm to 14 μm.
9 . A pattern of color emitter material on a substrate made by the method of claim 1 .
10 . The pattern of color emitter material of claim 9 , wherein the substrate forms a portion of an organic light-emitting diode.
11 . The pattern of color emitter material of claim 9 , wherein the substrate forms a portion of a device.
12 . The pattern of color emitter material of claim 11 , wherein the device is a display.
13 . The pattern of color emitter material of claim 12 , wherein the device is a microdisplay.
14 . A device comprising a pattern of color emitter material made by the method of claim 1 .
15 . The device of claim 14 , wherein the device is a display.
16 . The device of claim 15 , wherein the display is a microdisplay.Join the waitlist — get patent alerts
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