Semiconductor device and manufacturing method the same

Abstract

An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

1 . (canceled) 
     
     
         2 . A semiconductor device comprising:
 a gate electrode layer over a substrate;   a gate insulating layer over the gate electrode layer;   an oxide semiconductor layer over the gate insulating layer;   a crystalline film over the oxide semiconductor layer, the crystalline film comprising zinc and oxygen;   a source electrode layer over the crystalline film, the source electrode layer being in contact with a side surface of the oxide semiconductor layer and a side surface of the crystalline film; and   an insulating film over the source electrode layer.   
     
     
         3 . The semiconductor device according to  claim 2 , wherein the oxide semiconductor layer comprises a nanocrystal. 
     
     
         4 . The semiconductor device according to  claim 2 , wherein the oxide semiconductor layer comprises a crystal having a diameter of 1 nm to 10 nm. 
     
     
         5 . The semiconductor device according to  claim 2 , wherein the crystalline film is a polycrystalline film. 
     
     
         6 . The semiconductor device according to  claim 2 , wherein the crystalline film is a microcrystalline film. 
     
     
         7 . The semiconductor device according to  claim 2 , wherein a resistance of the crystalline film is lower than a resistance of the oxide semiconductor layer. 
     
     
         8 . The semiconductor device according to  claim 2 , further comprising a gate wiring over the insulating film,
 wherein the gate wiring is electrically connected to the gate electrode layer.   
     
     
         9 . The semiconductor device according to  claim 8 , further comprising:
 a connection electrode layer over the gate insulating layer; and   a source wiring over the insulating film,   wherein the gate wiring is electrically connected to the connection electrode layer, and   wherein the source wiring overlaps the connection electrode layer.   
     
     
         10 . The semiconductor device according to  claim 8 , further comprising:
 a connection electrode layer over the gate insulating layer; and   a source wiring over the insulating film,   wherein the source wiring is electrically connected to the connection electrode layer, and   wherein the gate wiring overlaps the connection electrode layer.   
     
     
         11 . The semiconductor device according to  claim 8 , wherein the gate wiring overlaps the source electrode layer. 
     
     
         12 . An electronic device comprising:
 a battery; and   a display portion comprising:
 a gate electrode layer over a substrate; 
 a gate insulating layer over the gate electrode layer; 
 an oxide semiconductor layer over the gate insulating layer; 
 a crystalline film over the oxide semiconductor layer, the crystalline film comprising zinc and oxygen; 
 a source electrode layer over the crystalline film, the source electrode layer being in contact with a side surface of the oxide semiconductor layer and a side surface of the crystalline film; and 
 an insulating film over the source electrode layer. 
   
     
     
         13 . The electronic device according to  claim 12 , wherein the oxide semiconductor layer comprises a nanocrystal. 
     
     
         14 . The electronic device according to  claim 12 , wherein the oxide semiconductor layer comprises a crystal having a diameter of 1 nm to 10 nm. 
     
     
         15 . The electronic device according to  claim 12 , wherein the crystalline film is a polycrystalline film. 
     
     
         16 . The electronic device according to  claim 12 , wherein the crystalline film is a microcrystalline film. 
     
     
         17 . The electronic device according to  claim 12 , wherein a resistance of the crystalline film is lower than a resistance of the oxide semiconductor layer. 
     
     
         18 . The electronic device according to  claim 12 ,
 wherein the display portion further comprises a gate wiring over the insulating film, and   wherein the gate wiring is electrically connected to the gate electrode layer.   
     
     
         19 . The electronic device according to  claim 18 ,
 wherein the display portion further comprises:
 a connection electrode layer over the gate insulating layer; and 
 a source wiring over the insulating film, 
   wherein the gate wiring is electrically connected to the connection electrode layer, and   wherein the source wiring overlaps the connection electrode layer.   
     
     
         20 . The electronic device according to  claim 18 ,
 wherein the display portion further comprises:
 a connection electrode layer over the gate insulating layer; and 
 a source wiring over the insulating film, 
   wherein the source wiring is electrically connected to the connection electrode layer, and   wherein the gate wiring overlaps the connection electrode layer.   
     
     
         21 . The electronic device according to  claim 18 , wherein the gate wiring overlaps the source electrode layer.