Pattern forming system and substrate processing system

Abstract

A pattern forming system includes: a forming device configured to form a pattern by etching a film on a substrate in a processing vessel; a member in the processing vessel that is positioned in the processing vessel to increase uniformity of the pattern in a surface of the substrate; a measurement apparatus configured to measure a shape or a critical dimension of the pattern; a control device configured to control a temperature of the member in the processing vessel; a processing gas supply unit configured to introduce a processing gas to the processing vessel; and an exhaust device configured to depressurize an inside of the processing vessel to a certain pressure level. The control device is configured to control the temperature of the member in the processing vessel based on the measured shape or the measured critical dimension of the pattern through a feedback control.

What is claimed is: 
     
         1 . A pattern forming system comprising:
 a forming device configured to form a pattern by etching a film on a substrate in a processing vessel;   a member in the processing vessel that is positioned in the processing vessel to increase uniformity of the pattern in a surface of the substrate;   a measurement apparatus configured to measure a shape or a critical dimension of the pattern;   a control device configured to control a temperature of the member in the processing vessel;   a processing gas supply unit configured to introduce a processing gas to the processing vessel; and   an exhaust device configured to depressurize an inside of the processing vessel to a certain pressure level,   wherein the control device is configured to control the temperature of the member in the processing vessel based on the measured shape or the measured critical dimension of the pattern through a feedback control.   
     
     
         2 . The pattern forming system of  claim 1 ,
 wherein the shape or critical dimension of the pattern is measured at a plurality of positions, and   when a deviation in data on the shape or the critical dimension measured at the plurality of positions is greater than a predetermined critical value, the temperature of the member in the processing vessel is controlled through the feedback control.   
     
     
         3 . The pattern forming system of  claim 1 ,
 wherein the member in the processing vessel is a focus ring or a mounting table.   
     
     
         4 . A substrate processing system, comprising:
 a processing vessel;   a mounting table configured to mount a substrate;   a focus ring that surrounds the substrate;   an electrostatic chuck that is installed at the mounting table and electrically attracts the substrate and the focus ring;   a heater configured to heat the focus ring;   a temperature control gas supply unit configured to supply a thermal conductive gas for cooling the focus ring;   a processing gas supply unit configured to supply a process gas to the processing vessel;   an exhaust device configured to depressurize an inside of the processing vessel to a certain pressure level; and   a control device configured to control a temperature of the focus ring by adjusting the heating of the focus ring by the heater and the cooling of the focus ring by the thermal conductive gas supplied from the temperature control gas supply unit, so as to increase uniformity in a surface of the substrate.   
     
     
         5 . A substrate processing system of  claim 4 ,
 wherein the thermal conductive gas is supplied to an interface between the electrostatic chuck and the focus ring.   
     
     
         6 . A substrate processing system, comprising:
 a processing vessel;   a mounting table configured to mount a substrate;   a focus ring that surrounds the substrate;   an electrostatic chuck that is installed at the mounting table and electrically attracts the substrate and the focus ring;   a heater configured to heat the focus ring;   a temperature control gas supply unit configured to supply a thermal conductive gas for cooling the focus ring;   a processing gas supply unit configured to supply a process gas to the processing vessel;   an exhaust device configured to depressurize an inside of the processing vessel to a certain pressure level; and   a control device configured to control the temperature of the focus ring by electrically attracting the focus ring to the mounting table, setting the temperature of the focus ring, heating the focus ring by the heater and cooling the focus ring by supplying He gas to a bottom of the focus ring, so as to increase uniformity in a surface of the substrate.   
     
     
         7 . A substrate processing system of  claim 6 ,
 wherein the thermal conductive gas is supplied to an interface between the electrostatic chuck and the focus ring.