Method for producing internal member of dry etching chamber

Abstract

A method for producing an internal member of a dry etching chamber by forming an yttria coating on the member. With H 2 gas and Ar gas used as working gases, Ar gas and H 2 gas are supplied to a plasma spray apparatus so the flow-volume ratio of Ar gas to H 2 gas is 6 to 8 with a flow rate of Ar gas set to 60 to 75 liters/min to increase the flow rate of Ar gas with respect to a flow rate of H 2 gas, so that the speed of a plasma jet is increased and the temperature of the plasma jet is decreased, then yttria fine powder having a particle size of 10 to 20 μm is introduced as a powder material to the plasma jet, and the plasma jet containing molten yttria fine powder is sprayed onto the surface of the member.

1 . A method for forming an yttria coating on a member to be used within a dry etching chamber by plasma spraying, the method comprising:
 supplying Ar gas and H 2  gas as working gases to a plasma spray apparatus in such a way that a volume ratio of the Ar gas flow to the H 2  gas flow is 6 to 8 with a flow rate of the Ar gas set to 60 to 75 liters/minute to increase the flow rate of the Ar gas with respect to a flow rate of the H 2  gas, so that a speed of a plasma jet is increased and a temperature of the plasma jet is decreased;   introducing yttria fine powder having a particle size of 10 to 20 μm as a powder material to the plasma jet; and   spraying the plasma jet containing molten yttria fine powder onto a surface of the member to form an yttria coating.