Substrate For Molecular Beam Epitaxy (MBE) HGCDTE Growth

Abstract

A semiconductor structure having a first semiconductor body having an upper surface with a non <211> crystallographic orientation and a second semiconductor body having a surface with a <211> crystallographic orientation, the surface of the second semiconductor body being bonded to a bottom surface of the first semiconductor body. A layer comprising CdTe is epitaxially disposed on the upper surface of the second semiconductor body. The second semiconductor body is CZ silicon, has a thickness less than 10 microns and has a diameter of at least eight inches. A getter having micro-cavities has a bottom surface formed on an upper surface of the first semiconductor body and has an upper surface bonded to a bottom surface of the second semiconductor body.

What is claimed is: 
     
         1 . A semiconductor structure, comprising:
 a first semiconductor body;   a getter layer;   a second semiconductor body;   wherein the getter layer has a bottom surface formed on an upper surface of the first semiconductor body and has an upper surface bonded to a bottom surface of the second semiconductor body.   
     
     
         2 . The semiconductor structure recited in  claim 1  wherein the second semiconductor body has a surface with a <211>. 
     
     
         3 . The semiconductor structure recited in  claim 2  including a layer comprising CdTe epitaxially disposed on the upper surface of the second semiconductor body. 
     
     
         4 . The semiconductor structure recited in  claim 3  wherein the second semiconductor body has a thickness at least an order of magnitude thinner than the thickness of the first semiconductor body. 
     
     
         5 . The semiconductor body recited in  claim 1  wherein the second semiconductor body is CZ silicon. 
     
     
         6 . The semiconductor structure recited in  claim 5  wherein the second semiconductor body has a thickness less than 10 microns. 
     
     
         7 . The semiconductor structure recited in  claim 1  wherein the first semiconductor body and the second semiconductor body are of the same semiconductor material. 
     
     
         8 . The semiconductor structure recited in  claim 1  wherein the getter layer has nanocavities. 
     
     
         9 . The semiconductor structure recited in  claim 8  wherein the second semiconductor body has a surface with a <211>. 
     
     
         10 . The semiconductor structure recited in  claim 9  including a layer comprising CdTe epitaxially disposed on the upper surface of the second semiconductor body. 
     
     
         11 . The semiconductor structure recited in  claim 1  wherein the first semiconductor body is FZ silicon.