Electro-optical device, manufacturing method thereof, and electronic apparatus

Abstract

In an electro-optical device, a mirror that is formed on an element substrate is sealed by a frame shaped spacer and a plate-like light-transmitting cover which is adhered to the spacer. An inorganic barrier layer is formed on an outer face of the spacer and a side face of the light-transmitting cover, and the boundary of the spacer and the light-transmitting cover is covered by the inorganic barrier layer.

What is claimed is: 
     
         1 . An electro-optical device comprising:
 an element substrate;   a mirror which is provided on a first face side of the element substrate;   a driving element which is provided on the first face side of the element substrate and which drives the mirror;   a frame-shaped spacer which surrounds the mirror and the driving element in planar view, and first end section of which is fixed to the element substrate;   a light-transmitting cover which is fixed to a second end section on an opposite side from the first end section of the spacer, has light-transmitting property, and is provided above the first face side such that the mirror is positioned between the element substrate and the light-transmitting cover; and   an inorganic layer which covers a boundary of the spacer and the light-transmitting cover.   
     
     
         2 . The electro-optical device according to  claim 1 ,
 wherein the inorganic layer continues from an outer face on an opposite side from the mirror of the spacer to a side face of the light-transmitting cover.   
     
     
         3 . The electro-optical device according to  claim 2 ,
 wherein the spacer is provided with a protruding section which protrudes toward an opposite side from the mirror from the side face of the light-transmitting cover, and   the inorganic layer continues from the outer face of the spacer to the side face of the light-transmitting cover via the face on the opposite side from a face which faces the element substrate of the protruding section.   
     
     
         4 . The electro-optical device according to  claim 1 ,
 wherein the light-transmitting cover is provided with a protruding section which protrudes toward the opposite side from the mirror from an outer face on the opposite side from the mirror of the spacer, and   the inorganic layer continues from the outer face of the spacer to the face which faces the element substrate of the protruding section.   
     
     
         5 . The electro-optical device according to  claim 1 ,
 wherein the inorganic layer includes at least one layer out of an aluminum oxide layer, a silicon oxide layer, and a silicon nitride layer.   
     
     
         6 . A manufacturing method of an electro-optical device comprising:
 preparing a first wafer which is provided with a first mirror and a first driving element that drives the first mirror in a first region on a first face side, and which is provided with a second mirror and a second driving element that drives the second mirror in a second region on the first face side;   forming a second wafer which is obtained by overlapping and adhering a light-transmitting wafer and a spacer wafer and which is provided with a second face on which a first concave section and a second concave sect ion which penetrate the spacer wafer are provided;   adhering the first face of the first wafer and the second face of the second wafer such that the first concave section overlaps with the first mirror in planar view and such that the second concave section overlaps with the second mirror in planar view; and   splitting a stacked body of the first wafer and the second wafer at a region between the first region and the second region,   wherein before the splitting, forming of an inorganic layer which covers a boundary of the light-transmitting wafer and the spacer wafer is performed.   
     
     
         7 . The manufacturing method of the electro-optical device according to  claim 6 ,
 wherein, in the forming of the second wafer, the second wafer in which the groove is provided between the first concave section and the second concave section is formed.   
     
     
         8 . The manufacturing method of the electro-optical device according to  claim 7 ,
 wherein, in the forming of the second wafer, the groove is formed so as to penetrate the spacer wafer before overlapping and adhering the light-transmitting wafer and the spacer wafer.   
     
     
         9 . The manufacturing method of the electro-optical device according to  claim 7 ,
 wherein, after the adhering and before the splitting, penetrating of the groove by removing a bottom section of the groove up to a third face on an opposite side from the second face of the second wafer is performed, and   after the penetrating of the groove, the inorganic layer is formed from the third face side to the inside of the groove before the splitting.   
     
     
         10 . The manufacturing method of the electro-optical device according to  claim 7 ,
 wherein, after the forming of the second wafer and before the adhering, penetrating of the groove by removing a bottom section of the groove up to a third face that is a face on an opposite side from the second face of the second wafer is performed, and   after the adhering and before the splitting, the inorganic layer is formed from the third face side to the inside of the groove.   
     
     
         11 . The manufacturing method of the electro-optical device according to  claim 7 ,
 wherein, before the adhering, penetrating of the groove by removing a bottom section of the groove up to a third face that is a face on the opposite side from the second face of the second wafer is performed, and   after the penetrating and before the adhering, the inorganic layer is formed from the third face side to the inside of the groove.   
     
     
         12 . The manufacturing method of the electro-optical device according to  claim 9 ,
 wherein, in the forming of the second wafer, the groove is formed so as to penetrate the spacer wafer, and   in the penetrating, the light-transmitting wafer is removed more widely than the width of the groove.   
     
     
         13 . The manufacturing method of the electro-optical device according to  claim 9 ,
 wherein, after the forming of the inorganic layer and the adhering, and before the splitting, grinding or polishing on the third face of the second wafer is performed, and the inorganic layer is removed from the third face.   
     
     
         14 . The manufacturing method of the electro-optical device according to  claim 9 ,
 wherein, in the forming of the inorganic layer, a first portion of the inorganic layer is formed between the first region and the second region of the first wafer on the first face side, and   after the forming of the inorganic layer and the adhering, and before the splitting, the first portion of the inorganic layer is removed in a state where an etching mask is formed.   
     
     
         15 . The manufacturing method of the electro-optical device according to  claim 9 ,
 wherein, in the penetrating, the bottom section of the groove is removed by a dicing blade.   
     
     
         16 . The manufacturing method of the electro-optical device according to  claim 9 ,
 wherein, in the penetrating, the bottom section of the groove is removed by etching.   
     
     
         17 . The manufacturing method of the electro-optical device according to  claim 7 ,
 wherein, after the adhering and before penetrating of the groove by removing a bottom section of the groove up to a third face that is a face on the opposite side from the second face of the second wafer, the forming of the inorganic layer on the inside of the groove is performed.   
     
     
         18 . The manufacturing method of the electro-optical device according to  claim 17 ,
 wherein in the forming of the inorganic layer, a first portion of the inorganic layer is formed between the first region and the second region of the first wafer on the first face side,   in the penetrating, the bottom section of the groove is removed from the third face of the second wafer using a dicing blade, and   after the penetrating, and before the splitting, etching is performed in which the first portion of the inorganic layer that is formed on the first wafer is removed by performing etching on the inorganic layer.   
     
     
         19 . The manufacturing method of the electro-optical device according to  claim 18 ,
 wherein the thickness of the dicing blade is smaller than a gap which is interposed by the inorganic layers formed on inner walls of the groove which oppose each other, and   in the etching, the first portion of the inorganic layer is removed by performing etching using the light-transmitting wafer as a mask.   
     
     
         20 . The manufacturing method of the electro-optical device according to  claim 19 ,
 wherein a terminal is formed in a region which overlaps with the groove on the first wafer, and   the thickness of the dicing blade is thicker than the width of a region in which the terminal is formed.   
     
     
         21 . An electronic apparatus provided with the electro-optical device according to  claim 1 , comprising:
 a light source section which irradiates the mirror with light from a light source.