Low resistivity materials for use in electroides

Abstract

The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO 2 while simultaneously preventing formation of RuO 2 ; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO 2 .

The embodiment of the invention in which an exclusive property or privilege is claimed is defined as follows: 
     
         1 . A pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO 2 . 
     
     
         2 . The material as recited in  claim 1  wherein the material is polycrystalline. 
     
     
         3 . The material as recited in  claim 1  wherein the material defines a homogenous gel-network of ruthenium and strontium. 
     
     
         4 . The material as recited in  claim 1  wherein the material further comprises a plurality of conformal films over a surface comprising silicon or nickel, or stainless steel, or hastealloy or Alumina, or SrTiO 3 , or LaAlO 3 , or MgO, or YSZ, or combinations thereof. 
     
     
         5 . The material as recited in  claim 1  wherein the material displays a resistivity of about 850±50 μΩ/cm. 
     
     
         6 . The material as recited in  claim 1  wherein the material overlays a substrate which defines an atomic lattice. 
     
     
         7 . The material as recited in  claim 6  wherein the material has strontium and ruthenium cations arranged in a polycrystalline structure that is similar in structure to the atomic lattice. 
     
     
         8 . The material as recited in  claim 1  wherein the material defines a conformal film. 
     
     
         9 . The film as recited in  claim 8  wherein the ruthenium is coupled to strontium cations in a metal-oxygen-metal (M-O-M) paradigm.