Back contact for a photovoltaic module

Abstract

The present invention relates to photovoltaic modules and methods of manufacturing photovoltaic modules.

What is claimed is: 
     
         1 . A method for manufacturing a back contact for a photovoltaic module, the method comprising:
 forming a semiconductor window layer over a substrate;   forming a semiconductor absorber layer over the window layer, the semiconductor absorber layer comprising one of CdTe and CIGS;   removing oxides from the absorber layer surface;   forming a first metal layer in direct physical contact with the oxide removed surface of the absorber layer, the first metal layer comprising a material selected from the group consisting of molybdenum, tungsten, nickel, cobalt, titanium, molybdenum nitride, titanium nitride, tungsten nitride, mercury tellurium, or any combination thereof;   heat treating the first metal layer; and   forming a second metal layer adjacent to the first metal layer.   
     
     
         2 . The method of  claim 1 , wherein the first metal layer comprises a material selected from the group consisting of molybdenum, molybdenum nitride, or any combination thereof. 
     
     
         3 . The method of  claim 1 , wherein the step of heat treating the first metal layer comprises a temperature of about 100° C. to about 400° C. and a duration of about 30 seconds to about 30 minutes. 
     
     
         4 . The method of  claim 1 , wherein the step of heat treating the first metal layer comprises a temperature of about 200° C. to about 300° C. and a duration of about 1 minute to about 20 minutes. 
     
     
         5 . The method of  claim 1 , wherein the first metal layer has a thickness of about 5 angstroms to about 300 angstroms. 
     
     
         6 . The method of  claim 1 , wherein the first metal layer has a thickness of about 50 angstroms to about 250 angstroms. 
     
     
         7 . The method of  claim 1 , wherein the second metal layer comprises a material selected from the group consisting of aluminum, chromium, iron, vanadium, manganese, zinc, ruthenium, silver, gold, copper, platinum, tungsten, nickel, cobalt, titanium, molybdenum nitride, titanium disilicide, titanium silicide, titanium nitride, tungsten nitride, and mercury tellurium, or any combination thereof. 
     
     
         8 . The method of  claim 1 , wherein the step of forming a back contact layer further comprises heat treating the second metal layer at a temperature of about 50° C. to about 400° C. for a duration of about 1 minute to about 30 minutes. 
     
     
         9 . The method of  claim 1 , wherein the step of forming a back contact layer further comprises heat treating the second metal layer at a temperature of about 50° C. to about 150° C. for a duration of about 5 minutes to about 20 minutes. 
     
     
         10 . The method of  claim 1 , wherein the second metal layer has a thickness of about 500 angstroms to about 10000 angstroms. 
     
     
         11 . The method of  claim 1 , wherein the second metal layer has a thickness of about 1000 angstroms to about 5000 angstroms. 
     
     
         12 . The method of  claim 1 , further comprising:
 cleaning a surface of the formed first metal layer before forming the second metal layer