Photoelectric conversion layer and photoelectric conversion device

Abstract

Provided are a quantum-dot layer having high absorbance and capable of enhancing power generation efficiency, and a solar cell. A photoelectric conversion layer includes a quantum-dot-containing layer, the quantum-dot-containing layer having a plurality of quantum dots and wall sections enclosing the quantum dots. In the cross section in the thickness direction of the quantum-dot-containing layer, three quantum dots aligned on a surface of the quantum-dot-containing layer so as to be adjacent to each other in the plane direction are extracted to draw straight line L so as to connect the surface side ends of the two quantum dots located on both sides, the quantum dot located in the middle protrudes from the straight line to the surface side by an amount equal to at least half the diameter of the quantum dot located in the middle.

1 . A photoelectric conversion layer comprising a quantum-dot-containing layer, the quantum-dot-containing layer having a plurality of quantum dots and wall sections enclosing the quantum dots, wherein in the cross section in the thickness direction of the quantum-dot-containing layer, the quantum dots are aligned along a surface of the quantum-dot-containing layer so as to be adjacent to each other, and when three quantum dots adjacent to each other are extracted to draw a straight line so as to connect the surface side ends of the two quantum dots located on both sides, the quantum dot located in the middle protrudes from the straight line to the surface side by an amount equal to at least half the diameter of the quantum dot located in the middle, the quantum dot located in the middle being a protrusion quantum dot. 
     
     
         2 . The photoelectric conversion layer according to  claim 1 , wherein when the surface of the quantum-dot-containing layer is seen in planar view, the protrusion quantum dots are arranged so as to be spaced from each other. 
     
     
         3 . The photoelectric conversion layer according to  claim 1 , wherein the quantum dots and the protrusion quantum dots of the quantum-dot-containing layer have the same main component. 
     
     
         4 . The photoelectric conversion layer according to  claim 1  wherein when the surface of the quantum-dot-containing layer is seen in planar view, the protrusion quantum dots are aligned in a curved shape. 
     
     
         5 . The photoelectric conversion layer according to  claim 1 , wherein the quantum dots and the protrusion quantum dots of the quantum-dot-containing layer are covered by the wall sections, the quantum dots and the wall sections and the protrusion quantum dots and the wall sections forming core-shell composite particles. 
     
     
         6 . The photoelectric conversion layer according to  claim 1 , wherein the quantum dots of the quantum-dot-containing layer are bonded to each other by the van der Waals force. 
     
     
         7 . The photoelectric conversion layer according to  claim 1 , further comprising a void between the quantum dots of the quantum-dot-containing layer. 
     
     
         8 . The photoelectric conversion layer according to  claim 1 , wherein the quantum dots of the quantum-dot-containing layer have an average particle diameter different in the thickness direction of the quantum-dot-containing layer. 
     
     
         9 . The photoelectric conversion layer according to  claim 8 , wherein the quantum-dot-containing layer has, in the thickness direction thereof, an upper layer, a middle layer, and a lower layer, the upper layer and the lower layer having a smaller average particle diameter than the middle layer. 
     
     
         10 . A photoelectric conversion device comprising an optical sensing layer having the photoelectric conversion layer according to  claim 1 . 
     
     
         11 . The photoelectric conversion device according to  claim 10 , wherein the optical sensing layer further comprises a first semiconductor layer, and a second semiconductor layer. 
     
     
         12 . The photoelectric conversion device according to  claim 10 , wherein the quantum-dot-containing layer has a quantum-dot-containing layer having p-type quantum dots, and a quantum-dot-containing layer having n-type quantum dots. 
     
     
         13 . The photoelectric conversion device according to  claim 10 , wherein the photoelectric conversion layer is provided so that the protrusion quantum dots are located on the incidence light side. 
     
     
         14 . The photoelectric conversion device according to  claim 10 , wherein the optical sensing layer includes a current collection layer arranged on the surface of the photoelectric conversion layer, the current collection layer having concave portions and convex portions on the surface on the photoelectric conversion layer side. 
     
     
         15 . The photoelectric conversion device according to  claim 14 , wherein the convex portions have a chevron-shaped cross section in the thickness direction of the current collection layer. 
     
     
         16 . The photoelectric conversion device according to  claim 14 , wherein the convex portions are aligned in a curved shape, when the current collection layer is seen in planar view from the photoelectric conversion layer side. 
     
     
         17 . The photoelectric conversion device according to  claim 14 , wherein the concave portions of the current collection layer are arranged so as to engage with the protrusion quantum dots of the photoelectric conversion layer. 
     
     
         18 . The photoelectric conversion device according to  claim 14 , wherein the current collection layers are arranged so as to sandwich the photoelectric conversion layer therebetween.