Surface Treatment Method for Atomically Flattening a Silicon Wafer and Heat Treatment Apparatus

Abstract

In a silicon wafer which has a surface with a plurality of terraces formed stepwise by single-atomic-layer steps, respectively, no slip line is formed.

1 .- 8 . (canceled) 
     
     
         9 . A method of atomically flattening a silicon wafer in an inert gas atmosphere at a temperature of 900° C. or less. 
     
     
         10 . A silicon wafer atomically flattening surface treatment method, wherein a silicon wafer is placed within a heat treatment space of a heat treatment apparatus and a gas transport passage for introducing a heat treatment atmospheric gas from the outside into the heat treatment space of the heat treatment apparatus has a double space structure separated at a joint portion with the heat treatment apparatus,
 wherein the double space structure has an inner space communicating with the heat treatment space and an outer space which does not communicate with the heat treatment space and which is adapted to evacuate a transported gas to the outside, and   wherein, in a silicon wafer heat treatment process, the heat treatment atmospheric gas is caused to flow in the inner space while the heat treatment atmospheric gas or a gas equivalent to the heat treatment atmospheric gas is caused to flow in the outer space.   
     
     
         11 . A silicon wafer atomically flattening surface treatment method by a surface heat treatment, wherein a heat treatment is carried out at a heat treatment temperature of 900° C. or less while introducing a heat treatment atmospheric gas with a purity of 0.2 vol·ppb or less moisture content and 0.1 vol·ppb or less oxygen content into a heat treatment space, where a silicon wafer is placed, in a heat treatment apparatus. 
     
     
         12 . A silicon wafer atomically flattening surface treatment method by a surface heat treatment, wherein a heat treatment is carried out at a heat treatment temperature of 900° C. or less while introducing a heat treatment atmospheric gas with a purity of 0.02 vol·ppb or less moisture content and 0.01 vol·ppb or less oxygen content into a heat treatment space, where a silicon wafer is placed, in a heat treatment apparatus. 
     
     
         13 . The silicon wafer atomically flattening surface treatment method according to  claim 10 , comprising:
 carrying out a heat treatment at a heat treatment temperature of 900° C. or less while introducing a heat treatment atmospheric gas with a purity of 0.2 vol·ppb or less moisture content and 0.1 vol·ppb or less oxygen content into the heat treatment space where the silicon wafer is placed.   
     
     
         14 .- 16 . (canceled)