Composite wire probe test assembly

Abstract

An examples includes a substrate, including a conductive trace and a layer disposed on top of the conductive trace, the layer defining at least one cavity extending to the conductive trace and an electrical probe disposed in the cavity, with solder coupling the electrical probe to the conductive trace. The electrical probe can include a high yield strength wire core including a refractory metal and a thin oxidation protection layer concentrically disposed around high yield strength wire core and providing an outside surface of the electrical probe, the thin oxidation protection layer including predominantly one or more materials selected from gold, platinum, ruthenium, rhodium, palladium, osmium, iridium, chromium, and combinations thereof, wherein the solder fills the cavity and is coupled to the electrical probe inside the cavity, disposed between the electrical probe and the layer.

What is claimed is: 
     
         1 . A semiconductor die test probe, comprising:
 a probe substrate, including an electrical contact;   a laminate disposed over the probe substrate, including a cavity through the laminate, wherein the cavity aligns with the electrical contact;   a composite probe wire extending from the cavity; and   a solder disposed within the cavity coupling the composite probe wire to the electrical contact.   
     
     
         2 . The semiconductor die test probe of  claim 1 , wherein the composite probe wire includes:
 a high yield strength wire core including a refractory metal; and   a low electrical resistivity layer concentrically around the high yield strength wire core.   
     
     
         3 . The semiconductor die test probe of  claim 1 , wherein the composite probe wire further includes an oxidation protection layer disposed between the high yield strength wire core and the low electrical resistivity layer. 
     
     
         4 . The semiconductor die test probe of  claim 1 , wherein the composite probe wire further includes an oxidation protection layer disposed over the low electrical resistivity layer. 
     
     
         5 . The semiconductor die test probe of  claim 4 , wherein the composite probe wire further includes an isolation layer located between the low electrical resistivity layer and the oxidation protection layer. 
     
     
         6 . The semiconductor die test probe of  claim 1 , wherein the laminate includes a dry film laminate. 
     
     
         7 . A semiconductor die test probe, comprising:
 a probe substrate, including an electrical contact;   a photoimageable laminate disposed over the probe substrate, including a cavity through the laminate, wherein the cavity aligns with the electrical contact;   a composite probe wire extending from the cavity; and   a solder including tin, disposed within the cavity coupling the composite probe wire to the electrical contact.   
     
     
         8 . The semiconductor die test probe of  claim 7 , wherein the solder includes an SAC solder. 
     
     
         9 . The semiconductor die test probe of  claim 7 , wherein the solder includes a tin-silver-lead solder. 
     
     
         10 . The semiconductor die test probe of  claim 7 , wherein the solder includes a type 6/7 solder paste. 
     
     
         11 . The semiconductor die test probe of  claim 7 , wherein the composite probe wire includes:
 a high yield strength wire core including a refractory metal; and   a low electrical resistivity layer concentrically around the high yield strength wire core.   
     
     
         12 . A semiconductor die test probe, comprising:
 a ceramic probe substrate, including an electrical contact;   a laminate disposed over the probe substrate, including a cavity through the laminate, wherein the cavity aligns with the electrical contact;   a composite probe wire extending from the cavity; and   a solder disposed within the cavity coupling the composite probe wire to the electrical contact.   
     
     
         13 . The semiconductor die test probe of  claim 12 , wherein the laminate includes a dry film laminate. 
     
     
         14 . The semiconductor die test probe of  claim 13 , wherein the laminate includes a photoimageable dry film laminate. 
     
     
         15 . A semiconductor die test probe, comprising:
 an organic probe substrate, including an electrical contact;   a laminate disposed over the probe substrate, including a cavity through the laminate, wherein the cavity aligns with the electrical contact;   a composite probe wire extending from the cavity; and   a solder disposed within the cavity coupling the composite probe wire to the electrical contact.   
     
     
         16 . The semiconductor die test probe of  claim 15 , wherein the laminate includes a dry film laminate. 
     
     
         17 . The semiconductor die test probe of  claim 16 , wherein the laminate includes a photoimageable dry film laminate.