Image sensor, imaging apparatus, electronic device, and imaging method

Abstract

There is provided an image sensor including at least three pixel transfer control signal lines, on a per line basis, configured to control exposure start and end timings of a pixel in order for exposure timings of a plurality of the pixels constituting one line in a specific direction to have at least three patterns.

1 .- 3 . (canceled) 
     
     
         4 . An image sensor comprising:
 pixel groups arranged in columns;   a first transfer gate control signal line connected to a first subset of the pixel groups in a first subset of the columns; and   a second transfer gate control signal line connected to a second subset of the pixel groups in a second subset of the columns,   wherein the first subset has a same pattern as that of the second subset, and the second pattern is shifted with respect to the first pattern by one or more columns,
 wherein a pixel group of the pixel groups includes:
 a floating diffusion element; 
 
 a first photoelectric conversion element arranged in a first row; 
 a second photoelectric conversion element arranged in a second row; 
 a first transfer transistor disposed between the first photoelectric conversion element and the floating diffusion element; and 
 a second transfer transistor disposed between the second photoelectric conversion element and the floating diffusion element. 
   
     
     
         5 . The image sensor of  claim 4 , wherein the first transfer gate control signal line is connected to the first transfer transistor. 
     
     
         6 . The image sensor of  claim 5 , wherein a second pixel group of the pixel groups includes:
 a second floating diffusion element;   a third photoelectric conversion element arranged in the first row;   a fourth photoelectric conversion element arranged in the second row;   a third transfer transistor disposed between the third photoelectric conversion element and the second floating diffusion element; and   a fourth transfer transistor disposed between the fourth photoelectric conversion element and the second floating diffusion element,   wherein the second transfer gate control signal line is connected to the fourth transfer transistor.