US2016265093A1PendingUtilityA1
Shape Memory Alloy Conductor That Resists Plastic Deformation
Est. expiryNov 1, 2033(~7.3 yrs left)· nominal 20-yr term from priority
C22C 38/14C22C 30/04C22C 38/34C22C 30/02H04R 5/033C22C 5/02C22C 28/00C21D 2211/001C22C 38/002C22C 38/04C22C 38/12C22C 20/00H01B 1/02C22C 9/01C22C 38/58C22C 9/04C22C 22/00A61L 31/14C22C 38/02C22C 38/105C21D 2211/008A61L 31/022H04R 1/1033C21D 2201/01C22C 30/06C22F 1/006H01B 7/40H01B 7/0009C22C 9/02A61L 2400/16F03G 7/06143F03G 7/064F03G 7/062H01B 7/1805H01B 7/041
44
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A conductor that resists plastic deformation is provided for an electronic signal-carrying or electric power-carrying cable, cable assembly, or device. The conducting element itself has favorable mechanical properties and therefore combines plastic deformation resistance with conductance. In one embodiment, the superelastic conductor is fabricated using a shape memory alloy such that the transformation temperature of the superelastic conductor is set outside the useful operating range of the conductor. In another embodiment, the conductor is fabricated using a shape memory alloy that is nominally in a martensitic phase under stress free conditions. In both embodiments, the conductor microstructures are able to accommodate externally applied strain, bending, deformation, or other external displacement through mechanisms which do not involve plastic deformation.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A superelastic conductor comprising a shape memory alloy material that has an electrical resistivity less than 500 nano-ohm-meters and is configured to carry a data signal or to supply electrical power, or both.
2 . The conductor of claim 1 that carries a direct current or alternating current waveform having a voltage in the range from about 0V to about 10V and a current in the range from 0 to about 20 milliamps.
3 . The conductor of claim 2 that is capable of transmitting a signal having a frequency in the range from DC to about 10 GHz.
4 . The conductor of claim 1 that is capable of carrying a digitally encoded signal.
5 . The conductor of claim 1 that is capable of carrying a voltage of 100V or more.
6 . The conductor of claim 1 that has a cross-sectional dimension in the range from about 10 micrometers to about 10,000 micrometers.
7 . The conductor of claim 1 , wherein the material is substantially in an austenitic phase when stress free.
8 . The conductor of claim 1 , wherein the material is substantially in an austenitic phase when stress free but transforms to a substantially martensitic phase when subjected to gross or localized bending, strain, or other externally applied deformation and accommodates such externally applied deformation through said phase transformation.
9 . The conductor of claim 1 , wherein the shape memory alloy has a transformation temperature that is at or below an intended operating temperature of the conductor.
10 . The conductor of claim 1 , configured for use as a single conductor.
11 . The conductor of claim 1 configured as a bare wire.
12 . The conductor of claim 1 configured as a wire with an electrically insulating coating substantially or completely covering its length.
13 . The conductor of claim 1 configured as a pair of conductors for use in an audio application.
14 . The conductor of claim 1 configured as part of a multi-conductor cable with or without shielding, wherein each individual conductor is a solid conductor.
15 . The conductor of claim 1 configured as part of a stranded cable.
16 . The conductor of claim 1 configured as part of a coaxial cable.
17 . The conductor of claim 1 configured as a flat ribbon.
18 . The conductor of claim 1 where the shape memory alloy is selected from the group consisting of the following alloys:
ALLOY
COMPOSITION (atomic %)
Ag—Cd
44-49 Cd
Au—Cd
46.5-48.0 Cd
Au—Cd
49-50 Cd
Cu—Zn
38.5-41.5 Zn
Cu—Sn
14-16 Sn
Cu—Zn—X
0-40 Zn 0-20 X
X = Si, Sn, Al, Ga
Cu—Al—Ni
10-35 Al, 2-5 Ni
Cu—Al—Mn
0-30 Al, 0-30 Mn
Cu—Au—Zn
23-28 Au, 45-47 Zn
Cu—Al—Be
22-25 Al, 0.5-8 Be
In—Tl
18-23 Tl
In—Cd
4-5 Cd
Mn—Cd
5-35-Cd
Fe—Pt
25 Pt
Fe—Ni—Co—Ti
23 Ni, 10 Co, 10 Ti
Fe—Ni—Co—Ti
33 Ni, 10 Co, 4 Ti
Fe—Ni—Co—Ti
31 Ni, 10 Co, 3 Ti
Fe—Ni—C
31 Ni, .4 C
Fe—Ni—Nb
31 Ni, 7 Nb
Fe—Mn—Si
30 Mn, 1 Si
Fe—Mn—Si
28-33 Mn, 4-6 Si
Fe—Cr—Ni—Mn—Si
9 Cr, 5 Ni, 14 Mn, 6 Si
Fe—Cr—Ni—Mn—Si
13 Cr, 6 Ni, 8 Mn, 6 Si
Fe—Cr—Ni—Mn—Si
8 Cr, 5 Ni, 20 Mn, 5 Si
Fe—Cr—Ni—Mn—Si
12 Cr, 5 Ni, 16 Mn, 5 Si
Fe—Mn—Si—C
17 Mn, 6 Si, 0.3 C
Fe—Pd
30 Pd
Fe—Pt
25 Pt
19 . The conductor of claim 18 , wherein the shape memory alloy is polycrystalline.
20 . The conductor of claim 18 , wherein the shape memory alloy is single crystalline.
21 . The conductor of claim 18 , wherein the material is oligocrystalline.
22 . A shape memory alloy conductor comprising a shape memory alloy that is substantially in a martensitic phase under stress free conditions and that has an electrical resistivity less than 500 nano-ohm-meters and is configured to carry a data signal, to supply electrical power, or both
23 . The conductor of claim 22 that carries a direct current or alternating current waveform having a voltage in the range from about 0V to about 10V and a current in the range from 0 to about 20 milliamps.
24 . The conductor of claim 23 that is capable of transmitting a signal having a frequency in the range from DC to about 10 GHz.
25 . The conductor of claim 22 that is capable of carrying a digitally encoded signal.
26 . The conductor of claim 22 that is capable of carrying a voltage of 100V or more.
27 . The conductor of claim 22 that has a cross-sectional dimension in the range from about 10 micrometers to about 10,000 micrometers.
28 . The conductor of claim 22 , wherein the shape memory alloy has a transformation temperature that is at or above the intended operating temperature of the conductor.
29 . The conductor of claim 22 configured for use as a single conductor.
30 . The conductor of claim 22 configured as a bare wire.
31 . The conductor of claim 22 configured as a wire with an electrically insulating coating substantially or completely covering its length.
32 . The conductor of claim 22 configured as a pair of conductors for use in an audio application.
33 . The conductor of claim 22 configured as part of a multi-conductor cable with or without shielding, wherein each individual conductor is a solid conductor.
34 . The conductor of claim 22 configured as part of a stranded cable.
35 . The conductor of claim 22 configured as part of a coaxial cable.
36 . The conductor of claim 22 configured as a flat ribbon.
37 . The conductor of claim 22 where the shape memory alloy is selected from the group consisting of the following alloys:
ALLOY
COMPOSITION (atomic %)
Ag—Cd
44-49 Cd
Au—Cd
46.5-48.0 Cd
Au—Cd
49-50 Cd
Cu—Zn
38.5-41.5 Zn
Cu—Sn
14-16 Sn
Cu—Zn—X
0-40 Zn 0-20 X
X = Si, Sn, Al, Ga
Cu—Al—Ni
10-35 Al, 2-5 Ni
Cu—Al—Mn
0-30 Al, 0-30 Mn
Cu—Au—Zn
23-28 Au, 45-47 Zn
Cu—Al—Be
22-25 Al, 0.5-8 Be
In—Tl
18-23 Tl
In—Cd
4-5 Cd
Mn—Cd
5-35-Cd
Fe—Pt
25 Pt
Fe—Ni—Co—Ti
23 Ni, 10 Co, 10 Ti
Fe—Ni—Co—Ti
33 Ni, 10 Co, 4 Ti
Fe—Ni—Co—Ti
31 Ni, 10 Co, 3 Ti
Fe—Ni—C
31 Ni, .4 C
Fe—Ni—Nb
31 Ni, 7 Nb
Fe—Mn—Si
30 Mn, 1 Si
Fe—Mn—Si
28-33 Mn, 4-6 Si
Fe—Cr—Ni—Mn—Si
9 Cr, 5 Ni, 14 Mn, 6 Si
Fe—Cr—Ni—Mn—Si
13 Cr, 6 Ni, 8 Mn, 6 Si
Fe—Cr—Ni—Mn—Si
8 Cr, 5 Ni, 20 Mn, 5 Si
Fe—Cr—Ni—Mn—Si
12 Cr, 5 Ni, 16 Mn, 5 Si
Fe—Mn—Si—C
17 Mn, 6 Si, 0.3 C
Fe—Pd
30 Pd
Fe—Pt
25 Pt
38 . The conductor of claim 37 , wherein the shape memory alloy is polycrystalline.
39 . The conductor of claim 37 , wherein the shape memory alloy is single crystalline.
40 . The conductor of claim 37 , wherein the material is oligocrystalline.
41 . A signal carrying or power distribution cable assembly comprising a conductor that resists plastic deformation; wherein the conductor is in a superelastic state.
42 . The cable assembly of claim 41 that carries a direct current or alternating current waveform having a voltage in the range from about 0V to about 10V and a current in the range from 0 to about 20 milliamps.
43 . The cable assembly of claim 41 that is capable of transmitting a signal having a frequency in the range from DC to about 10 GHz.
44 . The cable assembly of claim 41 that is capable of carrying a digitally encoded signal.
45 . The cable assembly of claim 41 that is capable of carrying a voltage of 100V or more.
46 . The cable assembly of claim 41 , wherein the conductor resists plastic deformation through superelasticity (the transformation between austenitic and martensitic phases).
47 . The cable assembly of claim 41 , wherein the conductor resists plastic deformation through movement of martensitic plates.
48 . The cable assembly of claim 41 configured for use with audio headphones, ear buds, or other electro-magnetic devices carrying electrically encoded audio information to the human ear.
49 . The cable assembly of claim 41 configured for use as speaker wire or acable that transmits electrically encoded audio information to an electromagnetic system that converts said encoded audio information back into sound.
50 . The cable assembly of claim 41 configured for use in a high vibrational loading environment.
51 . The cable assembly of claim 41 configured for use as aerospace applications including data signal transmission and power distribution.
52 . The cable assembly of claim 41 configured for use in a weapon system subjected to ballistic recoil or other intermittent, high amplitude shock loading, for either data signal transmission or power distribution.
53 . The cable assembly of claim 41 configured for use in automotive wiring harness assemblies, either for data signal transmission or power distribution.
54 . The cable assembly of claim 41 configured for use in wires or cable assemblies for downhole instrumentation used in oil and gas assemblies, either for data signal transmission or power distribution.
55 . The cable assembly of claim 41 configured for use in wires and cable assemblies used in computers or computer boards, either internal to the computer or as external cables providing power or data to the computer, either for data signal transmission or power distribution .
56 . The cable assembly of claim 41 configured for use in wiring or power distribution for railroad, commuter rail, or other rail applications, either for data signal transmission or power distribution.
57 . The cable assembly of claim 41 configured for applications wherein the shape memory alloy is trained using thermal processing to return to a specific shape or configuration when the cable assembly is not in use or is in a stress free condition.
58 . The cable assembly of claim 41 configured for applications wherein the shape memory alloy is able to recover a shape or revert to a shape when subjected to a change in temperature that is different form the intended use temperature.
59 . The cable assembly of claim 58 , wherein the change in temperature is electrically actuated through resistive heating of the superelastic conductor.
60 . The cable assembly of claim 58 , wherein the change in temperature is brought about by a change in environmental temperature.Join the waitlist — get patent alerts
Track US2016265093A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.