Magnetic Tunnel Junction Patterning Using Low Atomic Weight Ion Sputtering

Abstract

A method of magnetic tunnel junction patterning for magnetoresisitive random access memory devices using low atomic weight ion sputtering. The method includes: providing a magnetoresistive random access memory device including a hard mask metal, a MTJ element, and a semiconductor substrate, wherein the hard mask metal is disposed on the MTJ element and, wherein the MTJ element is disposed on the semiconductor substrate; and etching back the MTJ element into a plurality of MTJ element pillars using a low atomic weight ion sputtering. A magnetoresistive random access memory device using low atomic weight ion sputtering. The device includes: a semiconductor substrate; a plurality of MTJ element pillars disposed on the semiconductor substrate, wherein the plurality of MTJ element pillars is etched from a MTJ element using a low atomic weight ion sputtering; and a hard mask metal disposed on the MTJ element pillars.

1 - 10 . (canceled) 
     
     
         11 . A magnetoresistive random access memory device comprising:
 a semiconductor substrate;   a plurality of magnetic tunnel junction (MTJ) element pillars disposed on said semiconductor substrate, wherein said plurality of MTJ element pillars are etched from a MTJ element using low atomic weight ion sputtering; and   a hard mask metal disposed on said MTJ element pillars, wherein said hard mask metal comprises a plurality of cylindrical hard mask metal pillars.   
     
     
         12 . The device according to  claim 11 , further comprising:
 a low atomic weight projectile ion for sputtering, wherein said low atomic weight projectile ion has an atomic weight less than 39.948 amu.   
     
     
         13 . The device according to  claim 12 , wherein said low atomic weight projectile ion is selected from a group of ions consisting of: H+ and He+. 
     
     
         14 . (canceled) 
     
     
         15 . The device according to  claim 11 , wherein said hard mask metal is Tantalum based in composition. 
     
     
         16 . The device according to  claim 11 , wherein said MTJ element comprises:
 a plurality of magnetic thin films with a tunnel barrier.   
     
     
         17 . The device according to  claim 16 , wherein said plurality of magnetic thin films is selected from a group consisting of: cobalt, iron, nickel, cobalt alloy, iron alloy, nickel alloy, and nitrides and oxides. 
     
     
         18 . The device according to  claim 16 , wherein said tunnel barrier is selected from a group consisting of: tantalum, titanium, ruthenium, magnesium, aluminum, copper, tantalum alloy, titanium alloy, ruthenium alloy, magnesium alloy, aluminum alloy, copper alloy, and nitrides and oxides. 
     
     
         19 . The device according to  claim 11 , wherein said hard mask metal is Titanium based in composition. 
     
     
         20 . A magnetoresistive random access memory device comprising:
 a semiconductor substrate;   a MTJ element disposed on said semiconductor substrate;   a template disposed on said MTJ element, wherein the template comprises a plurality of vias etched therein; and   a plurality of cylindrical hard mask metal pillars disposed in said vias.   
     
     
         21 . The device according to  claim 20 , wherein said template comprises a patterned soft mask material.