Semiconductor device, manufacturing method for a semiconductor device, and nontransitory computer readable medium storing a pattern generating program

Abstract

According to one embodiment, a semiconductor device includes a stacked body of N (N is an integer of 2 or more) layers stacked on a semiconductor substrate and openings different in depth surrounded by the stacked body and separated from each other.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a stacked body of N (N is an integer of 2 or more) layers stacked on a semiconductor substrate; and   openings different in depth surrounded by the stacked body and separated from each other.   
     
     
         2 . The semiconductor device of  claim 1 , comprising a guide pattern configured to be provided on the stacked body to divide the openings. 
     
     
         3 . The semiconductor device of  claim 2 , wherein the guide pattern is arranged at a flat portion of the stacked body. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the guide pattern is made of a material different from that for the stacked body. 
     
     
         5 . The semiconductor device of  claim 1 , wherein
 the stacked body includes N layers of word lines; and   the openings are N contact holes corresponding to the N layers of word lines.   
     
     
         6 . The semiconductor device of  claim 5 , wherein contact holes in the lower-layer word lines penetrate through the upper-layer word lines. 
     
     
         7 . The semiconductor device of  claim 6 , comprising:
 N contact plugs embedded into the N contact holes; and   N extracted lines connected to the N layers of word lines via the N contact plugs.   
     
     
         8 . The semiconductor device of  claim 7 , comprising a columnar body penetrating through the N layers of word lines, wherein
 the columnar body includes:   a central body capable of forming a channel;   a tunnel insulating film formed on an outer peripheral surface of the central body;   a charge trap film formed on an outer peripheral surface of the tunnel insulating film; and   a block insulating film formed on an outer peripheral surface of the charge trap film.   
     
     
         9 . A manufacturing method for a semiconductor device, comprising:
 forming a three-dimensional structure on a semiconductor substrate;   forming a guide pattern corresponding to openings in the three-dimensional structure on the three-dimensional structure;   forming resist films different in thickness divided by the guide pattern on the three-dimensional structure; and   etching the three-dimensional structure via the resist films such that the openings are different in depth.   
     
     
         10 . The manufacturing method for a semiconductor device of  claim 9 , wherein
 the forming resist films different in thickness divided by the guide pattern on the three-dimensional structure includes:   forming resist films equal in thickness and different in area in the guide pattern on the three-dimensional structure; and   reflowing the resist films to cause differences in the thickness of the resist films.   
     
     
         11 . The manufacturing method for a semiconductor device of  claim 10 , wherein differences are made in crude density of a light-shielding pattern in an exposure mask for use in light exposure of the resist films to cause differences in areas of the resist films. 
     
     
         12 . The manufacturing method for a semiconductor device of  claim 9 , wherein the three-dimensional structure is a stacked body in which word lines and insulating films are alternately stacked. 
     
     
         13 . The manufacturing method for a semiconductor device of  claim 12 , wherein depths of the openings are set for each of the word lines in the layers. 
     
     
         14 . The manufacturing method for a semiconductor device of  claim 13 , comprising:
 forming side-wall insulating films on side walls of the openings; and   embedding into the openings contact plugs electrically connected to the word lines in the layers.   
     
     
         15 . A nontransitory computer readable medium storing a pattern generating program to cause a computer to perform:
 extracting a stepped region in a three-dimensional structure;   calculating a guide region around the stepped region; and   arranging a guide pattern in the guide region.   
     
     
         16 . The nontransitory computer readable medium of  claim 15 , wherein the guide region is set at a flat portion of the three-dimensional structure. 
     
     
         17 . The nontransitory computer readable medium of  claim 15 , wherein the guide pattern is set to surround a lower portion of the stepped region. 
     
     
         18 . A nontransitory computer readable medium storing a pattern generating program to cause a computer to perform:
 acquiring depth information of openings different in depth in a three-dimensional structure;   calculating a film thickness distribution of a resist necessary for obtaining the depth;   calculating volume of the resist necessary for obtaining the film thickness distribution in each of the openings; and   generating an extracted pattern of the resist necessary for obtaining the volume in each of the openings.   
     
     
         19 . The nontransitory computer readable medium of  claim 18 , wherein the three-dimensional structure is a stacked body in which word lines and insulating films are alternately stacked. 
     
     
         20 . The nontransitory computer readable medium of  claim 19 , wherein the depth information is depth information of contact holes for contact with the word lines.