Compound semiconductor structure

Abstract

A method for fabricating semiconductor structure comprises the steps of providing a substrate including a first crystalline semiconductor material, patterning an opening in a dielectric layer above the substrate, the opening having a bottom, forming a crystalline interlayer on the substrate at least partially covering the bottom, and growing a second crystalline semiconductor material on the crystalline interlayer thereby at least partially filling the opening. The crystalline semiconductor materials are lattice mismatched, and the crystalline interlayer comprises an oxygen compound.

What is claimed is: 
     
         1 . A method for fabricating semiconductor structure comprising:
 providing a substrate including a first crystalline semiconductor material;   patterning an opening in a dielectric layer above the substrate, the opening having a bottom;   forming a crystalline interlayer on the substrate at least partially covering the bottom; and   growing a second crystalline semiconductor material on the crystalline interlayer thereby at least partially filling the opening;   
       wherein:
 the first crystalline semiconductor material and the second crystalline semiconductor material are lattice mismatched; and 
 the crystalline interlayer comprises an oxygen compound. 
 
     
     
         2 . The method of  claim 1 , further comprising forming the dielectric layer on the substrate. 
     
     
         3 . The method of  claim 1 , further comprising forming the dielectric layer on the crystalline interlayer. 
     
     
         4 . The method of  claim 1 , wherein the opening is patterned in the dielectric layer thereby forming sidewalls of the opening. 
     
     
         5 . The method of  claim 1 , wherein the step of patterning the opening is performed after forming the crystalline interlayer. 
     
     
         6 . The method of  claim 1 , wherein growing the second crystalline semiconductor material on the crystalline interlayer comprises forming islands of said second crystalline semiconductor material on the crystalline interlayer. 
     
     
         7 . The method of  claim 6 , further comprising coalescing the islands thereby forming an epitaxial film. 
     
     
         8 . The method of  claim 1 , wherein growing the second crystalline semiconductor material on the crystalline interlayer comprises forming a single island of said second crystalline semiconductor material on the crystalline interlayer in the opening. 
     
     
         9 . The method of  claim 1 , further comprising overgrowing the opening with the second crystalline semiconductor material thereby filling the opening. 
     
     
         10 . The method of  claim 9 , further comprising, after filling the opening with the second crystalline semiconductor material, planarizing overgrown second crystalline semiconductor material. 
     
     
         11 . The method of  claim 1 , further comprising processing the second crystalline semiconductor material for fabricating electronic or optical devices.