US2016247918A1PendingUtilityA1
Forming strained fins of different materials on a substrate
Est. expiryNov 6, 2034(~8.3 yrs left)· nominal 20-yr term from priority
H10D 84/0158H10D 84/0128H10D 86/215H10D 86/011H10D 84/853H10D 84/0193H10D 84/0167H10D 84/038H10D 62/822H10D 30/62H10D 30/024H10D 30/791H01L 29/165H01L 29/785H01L 29/7842
49
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Claims
Abstract
A method, and the resulting structure, of forming two fins with different types of strain and material on the same substrate.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A semiconductor structure comprising:
a first fin located on a substrate, wherein the first fin comprises a first strained semiconductor material; and a second fin located on the substrate, wherein the second fin comprises a second strained semiconductor material.
2 . The structure of claim 1 , wherein the first strained semiconductor material is strained silicon.
3 . The structure of claim 1 , wherein the second strained semiconductor material is strained silicon germanium.
4 . The structure of claim 1 , wherein the first strained semiconductor material has a tensile strain.
5 . The structure of claim 1 , wherein the second strained semiconductor material has a compressive strain.
6 . The structure of claim 1 , wherein the substrate is a semiconductor-on-insulator substrate.Join the waitlist — get patent alerts
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