Semiconductor Devices And Fabrication Methods With Improved Word Line Resistance and Reduced Salicide Bridge Formation

Abstract

Provided are improved semiconductor memory devices and method for manufacturing such semiconductor memory devices. A method may incorporate the formation of silicide regions in a semiconductor. The method may allow for a semiconductor with a silicide layer with improved resistance and reduced silicide bridge formation.

That which is claimed: 
     
         1 . A method of forming a semiconductor device, the method comprising:
 forming a first conductive line and a second conductive line over a substrate;   forming a dielectric fill material physically touching the first conductive line, wherein a ratio of 1) a distance between the first conductive line and the second conductive line to 2) a difference in height of the first conductive line and the dielectric fill material is from about 0.1 to about 5.0; and   converting at least a portion of the first conductive line into one or more silicide regions.   
     
     
         2 . The method of  claim 1 , wherein a ratio of 1) a distance between the first conductive line and the second conductive line to 2) a difference in height of the first conductive line and the dielectric fill material is from about 0.48 to about 4.15. 
     
     
         3 . The method of  claim 1 , wherein converting at least a portion of the first conductive line into one or more silicide regions comprises applying at least one of cobalt, titanium, nickel, platinum, and tungsten to the first conductive line. 
     
     
         4 . The method of  claim 1 , wherein the first conductive line and second conductive line comprise polysilicon. 
     
     
         5 . The method of  claim 1 , further comprising doping the dielectric fill material with ions. 
     
     
         6 . The method of  claim 1 , wherein converting at least a portion of the first conductive line into one or more silicide regions comprises heating the semiconductor. 
     
     
         7 . The method of  claim 1 , wherein converting at least a portion of the first conductive line into one or more silicide regions comprises forming CoSi 2 . 
     
     
         8 . A method of forming a semiconductor device, the method comprising:
 forming a first word line and a second word line;   forming a dielectric fill material physically touching the first word line;   etching the dielectric fill material to provide a ratio of 1) a distance between the first word line and the second word line to 2) a difference in height of the first word line and the dielectric fill material is from about 0.1 to about 5.0; and   converting at least a portion of the first word line into one or more silicide regions.   
     
     
         9 . The method of  claim 8 , wherein a ratio of 1) a distance between the first word line and the second word line to 2) a difference in height of the first conductive line and the dielectric fill material is from about 0.48 to about 4.15. 
     
     
         10 . The method of  claim 8 , wherein converting at least a portion of the first word line into one or more silicide regions comprises applying at least one of cobalt, titanium, nickel, platinum, and tungsten. 
     
     
         11 . The method of  claim 8 , wherein the first word line comprises a first conductive layer and a second conductive layer. 
     
     
         12 . The method of  claim 8 , further comprising doping the dielectric fill material with ions. 
     
     
         13 . The method of  claim 8 , wherein converting at least a portion of the first word line into one or more silicide regions comprises forming CoSi 2 . 
     
     
         14 . A method of forming a semiconductor device, the method comprising:
 forming a first word line comprising a first conductive layer and a second conductive layer;   forming a dielectric fill material physically touching at least one of the first conductive layer and the second conductive layer, wherein a ratio of 1) a distance between the first word line and a second word line to 2) a difference in height of the first word line and the dielectric fill material is from about 0.1 to about 5.0; and   converting at least a portion of the second conductive layer into one or more silicide regions.   
     
     
         15 . The method of  claim 14 , further comprising doping the dielectric fill material with ions. 
     
     
         16 . The method of  claim 14 , wherein converting at least a portion of the second conductive layer into one or more silicide regions comprises forming CoSi 2 . 
     
     
         17 . The method of  claim 14 , wherein further comprising forming an oxide-nitride-oxide layer prior to forming the first word line. 
     
     
         18 . The method of  claim 14 , wherein a ratio of 1) a distance between the first word line and the second word line to 2) a difference in height of the first word line and the dielectric fill material is from about 0.48 to about 4.15. 
     
     
         19 . The method of  claim 14 , wherein converting at least a portion of the second conductive layer into one or more silicide regions comprises applying at least one of cobalt, titanium, nickel, platinum, and tungsten. 
     
     
         20 . The method of  claim 14 , wherein forming the second word line comprises providing polysilicon.