Display device

Abstract

A manufacturing method of a display device having an array substrate includes the steps of forming a projection of an organic material in a pixel on the array substrate by patterning a photosensitive material or by inkjet, forming a TFT on the array substrate, wherein a source electrode of the TFT is formed to extend on at least part of the upper surface of the projection, forming an inorganic passivation layer over the TFT and over at least part of the upper surface of the projection, forming an organic passivation layer over the inorganic passivation layer, forming an upper insulating layer over at least part of the organic passivation layer, forming a contact hole in the inorganic passivation layer and the upper insulation layer over the upper surface of the projection, and forming a pixel electrode on the upper insulation layer which contacts the source electrode.

What is claimed is: 
     
         1 . A display device comprising an array substrate,
 wherein a TFT and a projection are formed in a display area of the array substrate,   a first electrode connected to the array substrate extends to cover at least a part of the projection,   an organic passivation layer is formed to cover the TFT,   a second electrode is formed on the organic passivation layer,   the second electrode is connected to the first electrode on the projection,   a width of the first electrode is narrower compared to a maximum width of the projection, in a plan view.   
     
     
         2 . The display device according to  claim 1 ,
 wherein the TFT is configured in such a manner that a semiconductor layer is formed on the array substrate, a gate insulation film is formed over the semiconductor layer, a gate electrode is formed on the gate insulation film at a portion corresponding to the semiconductor layer, an interlayer insulation film is formed over the gate electrode, a drain electrode and the first electrode that are apart from each other are formed on the interlayer insulation film at a portion corresponding to the semiconductor layer, and the drain electrode and the first electrode are electrically connected to the semiconductor layer through through-holes formed in the interlayer insulation film and the gate insulation film; and   the second electrode connects with the first electrode through a through-hole formed in a first insulating film on the projection.   
     
     
         3 . The display device according to  claim 1 ,
 wherein the TFT is configured in such a manner that a gate electrode is formed on an array substrate, a gate insulation film is formed over the gate electrode, and a drain electrode and the first electrode are formed on the gate insulation film;   the projection is formed on the gate insulation film extending from the TFT; and   the second electrode is connected to the first electrode on the projection.   
     
     
         4 . The display device according to  claim 1 ,
 wherein the TFT is configured in such a manner that a drain electrode and the first electrode are formed on the array substrate, a semiconductor layer is formed on the drain electrode and the first electrode, a gate insulation film is formed over the semiconductor layer, and a gate electrode is formed on the gate insulation film at a portion corresponding to the semiconductor layer;   the second electrode connects with the first electrode through a through-hole formed in the gate insulating film on the projection, and   the projection is directly formed on the array substrate.   
     
     
         5 . The display device according to  claim 1 ,
 the TFT is configured in such a manner that a semiconductor layer is formed on the array substrate, a drain electrode and the first electrode are formed on the semiconductor layer at an interval, a gate insulation film is formed over the semiconductor layer, and a gate electrode is formed on the gate insulation film at a portion corresponding to the semiconductor layer; and   the second electrode connects with the first electrode through a through-hole formed in the gate insulating film on the projection, and   the projection is directly formed on the array substrate.   
     
     
         6 . The display device according to  claim 1 ,
 wherein the TFT is configured in such a manner that a gate electrode is formed on the array substrate, a gate insulation film is formed over the gate electrode, a drain electrode and the first electrode are formed on the gate insulation film above the gate electrode, and   a semiconductor layer is formed above the gate electrode over the gate insulation film, a part of the drain electrode, and a part of the first electrode.   
     
     
         7 . The display device according to  claim 1 , wherein the projection is made of an organic material. 
     
     
         8 . The display device according to  claim 7 , wherein the projection is a circular truncated cone or a truncated pyramid. 
     
     
         9 . The display device according to  claim 8 , wherein no organic passivation layer exists on an upper face of the projection. 
     
     
         10 . A display device comprising an array substrate,
 wherein a TFT and a projection are disposed in each driving circuit of the array substrate;   a first electrode of the TFT extends so as to cover at least a part of the projection;   an organic passivation layer is formed over the TFT;   an interconnection is formed on the organic insulation film; and   the interconnection is connected to the first electrode on the projection,   a width of the first electrode is narrower compared to a maximum width of the projection, in a plan view.   
     
     
         11 . The display device according to  claim 10 ,
 wherein the TFT is configured in such a manner that a semiconductor layer is formed on the array substrate, a gate insulation film is formed over the semiconductor layer, a gate electrode is formed on the gate insulation film at a portion corresponding to the semiconductor layer, an interlayer insulation film is formed over the gate electrode, a drain electrode and the first electrode that are apart from each other are formed on the interlayer insulation film at a portion corresponding to the semiconductor layer, and the drain electrode and the first electrode are electrically connected to the semiconductor layer through through-holes formed in the interlayer insulation film and the gate insulation film; and   the projection is formed on the interlayer insulation film extending from the TFT.   
     
     
         12 . The display device according to  claim 10 ,
 wherein the TFT is configured in such a manner that a gate electrode is formed on an array substrate, a gate insulation film is formed over the gate electrode, and a drain electrode and the first electrode are formed on the gate insulation film;   the projection is formed on the gate insulation film extending from the TFT; and   the interconnection is connected to the first electrode on the projection.   
     
     
         13 . The display device according to  claim 10 ,
 wherein the TFT and the projection are formed on the array substrate;   wherein the TFT is configured in such a manner that a drain electrode and the first electrode are formed on the array substrate, a semiconductor layer is formed on the drain electrode and the first electrode, a gate insulation film is formed over the semiconductor layer, and a gate electrode is formed on the gate insulation film at a portion corresponding to the semiconductor layer;   the interconnection connects with the first electrode through a through-hole formed in the gate insulating film on the projection, and   the projection is directly formed on the array substrate.   
     
     
         14 . The display device according to  claim 10 ,
 the TFT is configured in such a manner that a semiconductor layer is formed on the array substrate, a drain electrode and the first electrode are formed on the semiconductor layer at an interval, a gate insulation film is formed over the semiconductor layer, and a gate electrode is formed on the gate insulation film at a portion corresponding to the semiconductor layer; and   the projection is directly formed on the array substrate.   
     
     
         15 . The display device according to  claim 10 ,
 wherein the TFT is configured in such a manner that a gate electrode is formed on the array substrate, a gate insulation film is formed over the gate electrode, a drain electrode and the first electrode are formed on the gate insulation film, and   a semiconductor layer is formed above the gate electrode over the gate insulation film, a part of the drain electrode, and a part of the first electrode.   
     
     
         16 . The display device according to  claim 10 , wherein the projection is made of an organic material. 
     
     
         17 . The display device according to  claim 16 , wherein the projection is a circular truncated cone or a truncated pyramid. 
     
     
         18 . The display device according to  claim 17 , wherein no organic passivation layer exists on an upper face of the projection.