Semiconductor switching element driver circuit
Abstract
A driver circuit 101 is connected to a control terminal of a semiconductor switching element 1 . The driver circuit 101 includes an input circuit 3 connected to an input terminal 50 , and an output control circuit 4 connected to the input circuit 3 . A pulse signal output from the output control circuit 4 is input to a dead time adjustment circuit 13 . The dead time adjustment circuit 13 includes a delay circuit which can delay the rising edge and the falling edge of the pulse signal output from the output control circuit 4 on the basis of signals from temperature analog output circuits 11 and 12 . An output from the dead time adjustment circuit 13 is input to the drive circuit 5 . The drive circuit 5 outputs a drive signal to an output terminal 51 of the driver circuit 101.
Claims
exact text as granted — not AI-modified1 . A semiconductor switching element driver circuit comprising:
an input terminal to which an input signal is input; an output terminal connected to a control terminal of a semiconductor switching element; a signal circuit section which supplies to the output terminal a drive signal having an on edge turned on in response to a rising edge of the input signal, and an off edge turned off in response to a falling edge of the input signal; and temperature detector including both first temperature detector which outputs a first temperature detection signal having correlation with the temperature of the signal circuit section, and second temperature detector which receives a second temperature detection signal from an element temperature sensor element which senses the temperature of the semiconductor switching element, wherein at least one of the on edge and the off edge is delayed on the basis of both the first temperature detection signal and the second temperature detection signal so that the difference between an on transmission delay time which is a delay time between the rising edge and the on edge and an off transmission delay time which is a delay time between the falling edge and the off edge is reduced.
2 .- 3 . (canceled)
4 . The semiconductor switching element driver circuit according to claim 1 , wherein the first temperature detector includes:
an internal temperature sense element provided in the driver circuit; and a first temperature analog output circuit which produces the first temperature detection signal in analog form from an output from the internal temperature sense element.
5 . The semiconductor switching element driver circuit according to claim 1 , wherein the second temperature detector includes:
a temperature detection terminal connected to the element temperature sensor element to receive the second temperature detection signal; and a second temperature analog output circuit which produces the second temperature detection signal in analog form from an output from the element temperature sensor element.
6 . The semiconductor switching element driver circuit according to claim 1 , wherein the amount of delay of one of the on edge and the off edge having a smaller delay with respect to the input signal is made larger than the amount of delay of one of the on edge and the off edge having a larger delay with respect to the input signal.
7 . A semiconductor switching element driver circuit comprising:
an input terminal to which an input signal is input; an output terminal connected to a control terminal of a semiconductor switching element; a signal circuit section which produces a drive signal from the input signal and supplies the drive signal to the output terminal; and temperature detector including both first temperature detector which outputs a first temperature detection signal having correlation with the temperature of the signal circuit section, and second temperature detector which receives a second temperature detection signal from an element temperature sensor element which senses the temperature of the semiconductor switching element, wherein the signal circuit section includes a drive circuit which supplies a current to the control terminal of the semiconductor switching element, and wherein the drive circuit changes drive current capability on the basis of both of the first temperature detection signal and the second temperature detection signal.
8 . (canceled)
9 . The semiconductor switching element driver circuit according to claim 7 , wherein the drive circuit includes a plurality of output stage transistors; the plurality of output stage transistors are connected in parallel so that a plurality of current paths are formed in parallel with each other; and the drive circuit changes, on the basis of both of the first temperature detection signal and the second temperature detection signal, the number of output stage transistors to be turned on.
10 . A semiconductor switching element driver circuit comprising:
an input terminal to which an input signal is input; an output terminal connected to a control terminal of a semiconductor switching element; a signal circuit section which produces a drive signal from the input signal and supplies the drive signal to the output terminal; and temperature detector including both first temperature detector which outputs a first temperature detection signal having correlation with the temperature of the signal circuit section, and second temperature detector which receives a second temperature detection signal from an element temperature sensor element which senses the temperature of the semiconductor switching element, a short circuit protection terminal; and a short circuit protection circuit which transmits a stop signal to the signal circuit section when a voltage input to the short circuit protection terminal reaches a threshold value, and which sets the threshold value on the basis of both of the first temperature detection signal and the second temperature detection signal.
11 . (canceled)
12 . A semiconductor switching element driver circuit comprising:
an input terminal to which an input signal is input; an output terminal connected to a control terminal of a semiconductor switching element; a signal circuit section which produces a drive signal from the input signal and supplies the drive signal to the output terminal; a temperature detection circuit which outputs a first temperature detection signal having correlation with the temperature of the signal circuit section; a temperature detection terminal which receives a second temperature detection signal from a temperature sensor element for the semiconductor switching element; and an error signal generation circuit which outputs an error signal on the basis of the difference between a temperature indicated by the first temperature detection signal and a temperature indicated by the second temperature detection signal.
13 . The semiconductor switching element driver circuit according to claim 12 , wherein the error signal generation circuit switches among a plurality of error signals different from each other according to the value of the difference between the temperatures.
14 . The semiconductor switching element driver circuit according to claim 1 , wherein at least one of the amounts of delay of the edges is changed in a proportional relationship with at least one of the values of the first temperature detection signal and the second temperature detection signal.Join the waitlist — get patent alerts
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