Process component and method to improve mocvd reaction process

Abstract

The invention is related to a process component and the method to improve the MOCVD reaction. The principle of the improvement is to cover a compact protection film on the stainless steel body in the MOCVD reaction chamber. Said film is composed of the elements of the gas required during the MOCVD deposition process, or the elements that will not react with the reaction gases of MOCVD. Said film is a compound composed of at least one of the Al, Ga and Mg and at least one of the oxygen or nitrogen, or the other materials with stable chemical characteristics that will not react with the gases in the MOCVD process. Said film will not react with the gases in the MOCVD process or add contaminants to the MOCVD reaction chamber. Therefore, it could reduce the initialization time of the MOCVD process, and improve the efficiency of the MOCVD equipment. The protection film has the compact organization with the porosity less than 1%, and the thickness of the protection film is 1 nm to 0.5 mm.

What is claimed is: 
     
         1 . A process component to improve the MOCVD reaction process, including stainless steel main body, wherein, the surface of the stainless steel body is covered by a protection film which is a compound composed of at least one of the Al, Ga and Mg and at least one of the nitrogen and oxygen, or a Teflon material that will not react with the gases in the MOCVD processes, the porosity of said protection film is less than 1%. 
     
     
         2 . The process component of  claim 1 , wherein, the thickness of said protection film is 1 nm to 0.5 mm. 
     
     
         3 . The process component of  claim 1 , wherein, the thickness of the protection film is 1 nm to 10 μm, and the roughness of the surface of the stainless steel main body is 1 μm to 2 μm. 
     
     
         4 . The process component of  claim 1 , wherein, the thickness of the protection film is 10 μm to 0.5 mm, and the roughness of the surface of the stainless steel main body is 2 μm to 10 μm. 
     
     
         5 . The process component of  claim 1 , wherein, the process component is the one contacting with the reaction gases in the MOCVD reaction chamber, including the gas showerhead component, the side wall of the reaction chamber and the lifting ring. 
     
     
         6 . The process component of  claim 5 , wherein, the gas showerhead component includes the upper cover plate, gas distribution plate and water cooling plate, said gas distribution plate has multiple groups of gas delivery pipes, said gas distribution plate, upper cover plate and water cooling plate are assembled into the gas showerhead component after being coated with protection films respectively. 
     
     
         7 . The process component of  claim 1 , wherein, the protection film has the compact organization with the porosity of zero. 
     
     
         8 . The process component of  claim 1 , wherein, the compositions of said protection film is one or more of the gallium nitride, aluminum nitride, magnesium nitride, gallium oxide, aluminum oxide, and magnesium oxide. 
     
     
         9 . The process component of  claim 1 , wherein, further including an intermediate protection film between the stainless steel main body and the protection film, and the porosity of the intermediate protection film is higher than that of the protection film. 
     
     
         10 . The process component of  claim 9 , wherein, the porosity of the intermediate protection film is 1% to 5%. 
     
     
         11 . A method to improve the MOCVD reaction process, wherein, including the following steps: provide a plasma protection film coating device, which includes a vacuum chamber; a process component to be coated is fixed in said vacuum chamber, said process component includes a stainless steel body that will contact with the reaction gases in the MOCVD reaction chamber;
 said process component will be coated in the plasma protection film coating device with a compact protection film with the porosity of less than 1%, said protection film is a compound composed of at least one of the Al, Ga and Mg and at least one of the oxygen or nitrogen, or the other materials that will not react with the gases in the MOCVD process;   the coated process component will be installed in the MOCVD reaction chamber for the MOCVD process, said protection film of the process component will protect the stainless steel body from reacting with the reaction gases in the MOCVD reaction chamber;   the steps of coating the protection film on the process component in the plasma protection film coating device are as follows:   put source material in said vacuum chamber;   put said process component to be coated in said vacuum chamber, and make the surface of the process component face to the source material in the vacuum chamber;   evaporate or sputter the source material on the surface of the process component to be coated;   inject the reaction gases and non-reaction gases in said vacuum chamber;   ionize said reaction gases and non-reaction gases and maintain the plasmas on the surface of the process component to make the ions of the ionized reaction and non-reaction gases hit on the surface of the process component to be coated and react with said source material so as to form compact protection film on at least a part of the surface of the gas showerhead component, wherein, said protection film includes the atoms from the source materials and the atoms from the compositions of said reaction gases.   
     
     
         12 . The method of  claim 11 , wherein, the source material includes one or more of the solid aluminum, gallium, magnesium, gallium nitride, aluminum nitride, magnesium nitride, gallium oxide, magnesium oxide or aluminum oxide. 
     
     
         13 . The method of  claim 11 , wherein, the device used to ionize said reaction and non-reaction gases into plasmas is plasma generator. 
     
     
         14 . The method of  claim 11 , wherein, the method to ionize said reaction and non-reaction gases into plasmas is microwave or radio frequency. 
     
     
         15 . The method of  claim 11 , wherein, said process component to be coated includes the gas showerhead component, side walls of the reaction chamber and the lifting ring. 
     
     
         16 . The method of  claim 11 , wherein said process component to be coated is the gas showerhead component; the gas showerhead component includes a gas distribution plate, an upper cover plate and a water cooling plate, the gas distribution plate, upper cover plate and water cooling plate shall be placed respectively in the plasma protection film coating device for coating the protection film before assembling into gas showerhead component. 
     
     
         17 . The method of  claim 11 , wherein, the plasma protection film coating device could coat the protection film with the thickness of 1 nm to 0.5 mm on the surface of the process component.