Semiconductor device and semiconductor device manufacturing method

Abstract

A semiconductor device has a p-type metal oxide semiconductor layer; a source electrode connected with the p-type metal oxide semiconductor layer; a drain electrode connected with the p-type metal oxide semiconductor layer; and a gate electrode arranged to oppose to a part of the p-type metal oxide semiconductor layer. The gate electrode and the drain electrode are separated from each other in a top view.

1 - 16 . (canceled) 
     
     
         17 . A semiconductor device comprising:
 a first transistor; and   a second transistor,   wherein the first transistor comprises:
 a first p-type metal oxide semiconductor region; 
 a first source electrode connected with the first p-type metal oxide semiconductor region; 
 a first drain electrode connected with the first p-type metal oxide semiconductor region; 
 a first gate electrode arranged to oppose a part of the first p-type metal oxide semiconductor region, 
   wherein the first gate electrode is arranged between the first source electrode and the first drain electrode in a top view, and the first gate electrode and the first drain electrode are separated from each other in the top view,   wherein the second transistor comprises:
 a second p-type metal oxide semiconductor region; 
 a second source electrode connected with the second p-type metal oxide semiconductor region; 
 a second drain electrode connected with the second p-type metal oxide semiconductor region; and 
 a second gate electrode arranged to oppose a part of the second p-type metal oxide semiconductor region, 
   wherein the second gate electrode is arranged between the second source electrode and the second drain electrode in the top view, and the second gate electrode and the second drain electrode overlap partially in the top view,   wherein the first p-type metal oxide semiconductor region and the second p-type metal oxide semiconductor region are provided in a same layer,   wherein the first p-type metal oxide semiconductor region and the second p-type metal oxide semiconductor region are covered with an insulating film,   wherein the first source electrode, the first drain electrode, the second source electrode and the second drain electrode are embedded in the insulating film, and   wherein the first gate electrode and the second gate electrode are provided in a same layer.   
     
     
         18 . The semiconductor device according to  claim 17 , wherein the first gate electrode and the second gate electrode are connected with an input terminal, and the first drain electrode and the second drain electrode are connected with an output terminal. 
     
     
         19 . The semiconductor device according to  claim 18 , further comprising:
 a coupling p-type metal oxide semiconductor region extending along a second direction to connect the first p-type metal oxide semiconductor region and the second p-type metal oxide semiconductor region,   wherein the first gate electrode and the second gate electrode extend along the second direction and comprise a continuous member, the first p-type metal oxide semiconductor region extends along a first direction orthogonal to the second direction to intersect with the first gate electrode in the top view, and the second p-type metal oxide semiconductor region extends along the first direction to intersect with the second gate electrode in the top view, and   wherein the coupling p-type metal oxide semiconductor region is connected with the output terminal through an auxiliary electrode different from the first drain electrode and the second drain electrode.   
     
     
         20 . (canceled)