Semiconductor Device and Method of Manufacturing the Same

Abstract

To improve the reliability of a semiconductor device. The semiconductor device includes a plurality of wiring layers formed on a semiconductor substrate, a pad formed on an uppermost wiring layer of the plurality of wiring layers, a surface protection film which includes an opening on the pad and is made of an inorganic insulating film, a rewiring formed on the surface protection film; a pad electrode formed on the rewiring, and a wire connected to the pad electrode. The rewiring includes a pad electrode mounting portion on which the pad electrode is mounted, a connection portion which is connected to the pad, and an extended wiring portion which couples the pad electrode mounting portion and the connection portion, and the pad electrode mounting portion has a rectangular shape when seen in a plan view.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a semiconductor substrate;   a plurality of wiring layers formed on the semiconductor substrate;   a pad formed on an uppermost wiring layer of the plurality of wiring layers;   a surface protection film which includes an opening on the pad and is made of an inorganic insulating film;   a rewiring formed on the surface protection film; and   a pad electrode which is formed on the rewiring, and is a region for connection with a wire,   wherein the rewiring includes a pad electrode mounting portion on which the pad electrode is mounted, a connection portion which is connected to the pad, and an extended wiring portion which couples the pad electrode mounting portion and the connection portion, and   the pad electrode mounting portion has a rectangular shape when seen in a plan view.   
     
     
         2 . The semiconductor device according to  claim 1 ,
 wherein the pad electrode covers an entire upper surface and a side surface of the pad electrode mounting portion.   
     
     
         3 . The semiconductor device according to  claim 1 ,
 wherein a film thickness of the rewiring is five or more times a film thickness of the uppermost wiring layer on which the pad is formed.   
     
     
         4 . The semiconductor device according to  claim 3 ,
 wherein the rewiring is made of a copper film.   
     
     
         5 . The semiconductor device according to  claim 1 ,
 wherein the pad electrode mounting portion has two short sides and two long sides,   the extended wiring portion is connected to one side of the two short sides, and   a wiring width of the extended wiring portion is smaller than a length of the short side.   
     
     
         6 . The semiconductor device according to  claim 5 ,
 wherein a first fin portion is connected to the other side of the two short sides, and   the first fin portion extends to an outer side of the pad electrode mounting portion.   
     
     
         7 . The semiconductor device according to  claim 6 ,
 wherein the wire is formed on the pad electrode, and   the wire extends from the pad electrode mounting portion toward the connection portion above the rewiring.   
     
     
         8 . The semiconductor device according to  claim 5 ,
 wherein a second fin portion is connected to one side of the two long sides, and   the second fin portion extends to an outer side of the pad electrode mounting portion.   
     
     
         9 . The semiconductor device according to  claim 1 ,
 wherein the surface protection film is made of a silicon nitride film, and   the rewiring is in contact with an upper surface of the silicon nitride film.   
     
     
         10 . The semiconductor device according to  claim 1 ,
 wherein the pad electrode is made of a gold film, and   the wire is formed on the pad electrode, and is connected to the gold film.   
     
     
         11 . A method of manufacturing a semiconductor device, the method comprising:
 (a) preparing a semiconductor substrate which includes a plurality of wiring layers and a pad formed on an uppermost wiring layer of the plurality of wiring layers;   (b) forming a surface protection film which includes an opening on the pad and is made of an inorganic insulating film;   (c) forming a rewiring, which is electrically connected to the pad via the opening, on the surface protection film;   (d) forming a pad electrode on the rewiring; and   (e) forming a ball at a tip end of a wire, and connecting the ball to the pad electrode while applying ultrasonic vibration to the ball in a first direction,   wherein the rewiring includes a pad electrode mounting portion on which the pad electrode is mounted, a connection portion which is connected to the pad, and an extended wiring portion that couples the pad electrode mounting portion and the connection portion, and   the pad electrode mounting portion has a rectangular shape with long sides and short sides.   
     
     
         12 . The method of manufacturing the semiconductor device according to  claim 11 ,
 wherein the first direction is a direction along the long side.   
     
     
         13 . The method of manufacturing the semiconductor device according to  claim 12 ,
 wherein the pad electrode covers a front surface of the pad electrode mounting portion, and extends to a side wall of the pad electrode mounting portion.   
     
     
         14 . The method of manufacturing the semiconductor device according to  claim 11 ,
 wherein the first direction is a direction along the short side.   
     
     
         15 . The method of manufacturing the semiconductor device according to  claim 11 ,
 wherein the pad electrode mounting portion includes a fin portion which extends from the long side or the short side to an outer side of the pad electrode mounting portion.