Novel photoresist stripper and application process thereof

Abstract

A novel photoresist stripping liquid, used for removing superfluous photoresist on a substrate, comprises an organic solvent used for dissolving, a decrosslinking catalyst for accelerating stripping speed, and an anticorrosion agent for avoiding the substrate corrosion. The photoresist stripping liquid can shorten a stripping period, has no toxicity to human body and environment, and can thoroughly remove cross-linked photoresist after exposure, especially negative photoresist. In addition, the present invention also provides an application process of the photoresist stripping liquid. The process does not comprise heating and oscillation, thereby increasing the stripping speed and avoiding possible damage caused by auxiliary measures to the substrate.

1 . A photoresist stripping liquid, the said photoresist stripping liquid comprises total solvent, organic solvents, decrosslinking catalysts, anticorrosion agents and other additives. 
     
     
         2 . The photoresist stripping liquid according to  claim 1 , wherein the said total solvent is dimethyl sulfoxide or N-methyl pyrrolidone. 
     
     
         3 . The photoresist stripping liquid according to  claim 2 , wherein the said total solvent accounts for the weight percentage of 65˜78%. 
     
     
         4 . (canceled) 
     
     
         5 . The photoresist stripping liquid according to  claim 1 , wherein the said organic solvents are selected from one of the group consisting of ketones, polyols and derivatives thereof, ring ethers, esters, amines, or mixtures of more than one thereof. 
     
     
         6 . (canceled) 
     
     
         7 . (canceled) 
     
     
         8 . (canceled) 
     
     
         9 . (canceled) 
     
     
         10 . (canceled) 
     
     
         11 . The photoresist stripping liquid according to  claim 4 , wherein the said the content of the organic solvents is accounted for 20 to 30% of the total weight of the photoresist stripping liquid. 
     
     
         12 . (canceled) 
     
     
         13 . The photoresist stripping liquid according to  claim 1 , wherein the said decrosslinking catalysts are organic dibasic acid. 
     
     
         14 . The photoresist stripping liquid according to  claim 13 , wherein the said organic dibasic acid is at least one of oxalic acid, malonic acid, terephthalic acid, benzoic acid, benzenesulfonic acid. 
     
     
         15 . (canceled) 
     
     
         16 . The photoresist stripping liquid according to  claim 15 , wherein the content of the said decrosslinking catalysts is accounted for 4 to 6% of the total weight of the photoresist stripping liquid. 
     
     
         17 . (canceled) 
     
     
         18 . The photoresist stripping liquid according to  claim 1 , wherein the said anticorrosion agents are at least one of oxalic acid, acetyl acetone, 2,2′-bipyridine, ethylenediamine. 
     
     
         19 . (canceled) 
     
     
         20 . The photoresist stripping liquid according to  claim 18 , wherein the content of the said anticorrosion agents is accounted for 0.5 to 1.5% by the total weight of the photoresist stripping liquid. 
     
     
         21 . An application process of the photoresist stripping liquid, comprising the following steps:
 1) coating the conductive metal film or the insulating film formed on a substrate with photoresist;   2) by the steps of softbake, exposure, PEB, and development a photoresist pattern is formed on the substrate;   3) by the process steps of etching, ion implantation or metal deposition etc., the patterning will be transferred to the substrate without protected by photoresist;   4) placing the photoresist stripping liquid said in claims  1 ˜ 10  into the stripping tank, heating to a suitable temperature and keeping constant temperature;   5) the substrate with photoresist is immersion in the stripping liquid at a constant temperature and then taken out;   6) rinsing the substrate with rinsing fluid and drying, to stripping the photoresist completely; and   7) observing the substrate surface under a microscope or a scanning electron microscope (SEM), and confirming no photoresist residue.   
     
     
         22 . An application process of the photoresist stripping liquid according to  claim 21 , wherein in the step 1, the said substrate is substrate material containing metals. 
     
     
         23 . (canceled) 
     
     
         24 . An application process of the photoresist stripping liquid according to  claim 21 , wherein in the step 1, the way of coating the photoresist is anyone of roller coating, slit coating, spin coating. 
     
     
         25 . An application process of the photoresist stripping liquid according to  claim 21 , wherein in the step 4, the photoresist stripping liquid is heated to 50-70° C., and then kept constant temperature. 
     
     
         26 . (canceled) 
     
     
         27 . (canceled) 
     
     
         28 . An application process of the photoresist stripping liquid according to  claim 21 , wherein in the step 5, the said substrate in the said constant temperature stripping liquid keeps constant temperature for 5-40 min. 
     
     
         29 . (canceled) 
     
     
         30 . (canceled) 
     
     
         31 . An application process of the photoresist stripping liquid according to  claim 21 , wherein in the step 6, the said substrate is removed from the stripping liquid before rinsing with rinsing liquid and immersed in an organic solvents. 
     
     
         32 . (canceled) 
     
     
         33 . An application process of the photoresist stripping liquid according to  claim 31 , wherein the said organic solvents are at least one of ethanol, ethylene glycol, isopropanol, acetone. 
     
     
         34 . An application process of the photoresist stripping liquid according to  claim 31 , wherein the said substrate is immersed for 0˜10 min. 
     
     
         35 . (canceled) 
     
     
         36 . An application process of the photoresist stripping liquid according to  claim 21 , wherein in the step 6, the rinsing liquid is deionized water. 
     
     
         37 . (canceled) 
     
     
         38 . An application process of the photoresist stripping liquid according to  claim 21 , wherein in the step 6, the way of drying the substrate is blowing-dry with nitrogen or shaking-dry by rotary manner.